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Nexperia Digital Transistor 500 mA NPN 50 V 6-Pin SOT-457 PIMN31,115
Specifications
| Country of Origin | Malaysia |
|---|---|
| Brand | Nexperia |
| Height | 1.1mm |
| Length | 3.1mm |
| Model | PIMN31,115 |
| Width | 1.7mm |
| Mount Type | Surface |
| Series | PIMN31 |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-457 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 6 |
| Maximum Collector Emitter Voltage Vceo | 50V |
| Minimum DC Current Gain hFE | 70 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Base Voltage VCBO | 50V |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 420mW |
| Maximum DC Collector Current Idc | 500mA |
| Transistor Configuration | Isolated |
Key Features
- Maximum DC collector current of 500 mA.
- Maximum collector emitter voltage rating of 50 V.
- Integrated dual resistor configuration for simplified digital interface.
- Compact 6-Pin SOT-457 surface mount package measuring 3.1mm x 1.7mm x 1.1mm.
- Operates across a wide temperature range from -65°C to 150°C.
- Minimum DC current gain (hFE) of 70 ensuring reliable transistor switching.
- Designed to automotive standard AEC-Q101 ensuring high quality and reliability.
- NPN polarity transistor with isolated transistor configuration.
Product Description
Nexperia PIMN31,115 Digital Transistor is a high-performance NPN transistor featuring a dual resistor design, enabling direct drive from digital sources without additional components. This device supports a maximum DC collector current of 500 mA and can withstand up to 50 V collector-emitter voltage.
Housed in a compact 6-Pin SOT-457 surface mount package (3.1 mm length, 1.7 mm width, and 1.1 mm height), the transistor offers ease of integration into high-density printed circuit boards. Its isolated transistor configuration and integrated resistors simplify biasing, enhancing design efficiency.
Designed for robustness, the PIMN31,115 transistor operates reliably within a temperature range of -65°C to 150°C and meets the automotive industry standard AEC-Q101, making it suitable for demanding automotive and industrial applications.
The transistor is engineered with a minimum DC current gain (hFE) of 70 and a maximum power dissipation capacity of 420 mW, catering to low power yet reliable switching applications in electronic circuits.
Suitable for electronic, automotive, industrial automation, and semiconductor projects, this Digital Transistor delivers reliable performance with minimal external component requirements.
Maximum DC collector current of 500 mA. Maximum collector emitter voltage rating of 50 V. Compact 6-Pin SOT-457 surface mount package. Wide operating temperature range from -65°C to 150°C. Meets AEC-Q101 automotive standard.
Minimum current gain (hFE) of 70. Isolated transistor configuration with dual integrated resistors. 420 mW maximum power dissipation. Ideal for automotive, industrial, and digital circuit applications. Explore the extensive range of semiconductors and electronic components at EnvMart for advanced design and manufacturing solutions.
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Frequently Asked Questions
The maximum DC collector current of this digital transistor is 500 mA.
This model has a maximum collector-emitter voltage rating of 50 V.
The SOT-457 package measures 3.1 mm in length, 1.7 mm in width, and 1.1 mm in height.
It operates reliably within a temperature range of -65°C to 150°C.
The minimum DC current gain (hFE) is 70, ensuring reliable transistor switching.
It is designed to meet the automotive standard AEC-Q101, ensuring high quality and reliability.
This model is an NPN polarity transistor with an isolated transistor configuration.
The maximum power dissipation capacity is 420 mW.
No, it features an integrated dual resistor configuration that allows for direct drive from digital sources without additional components.
This transistor uses a surface mount type for easy integration into printed circuit boards.
It is suitable for automotive, industrial automation, and semiconductor projects, providing reliable performance in electronic circuits.
The country of origin for this digital transistor is Malaysia.
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