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DiodesZetex Bipolar Power Transistor NPN 1 A 150 V 3-Pin DPAK Surface Mount TO-252 ZXTN4004KTC

Category Bipolar Power Transistor Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 10.41mm
Length 6.7mm
Model ZXTN4004KTC
Width 6.7mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type TO-252
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 150V
Minimum DC Current Gain hFE 60
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 7V
Maximum Collector Base Voltage VCBO 150V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 3.8W
Maximum DC Collector Current Idc 1A
Transistor Configuration Single

Key Features

  • Provides reliable switching and amplification for electronic circuits.
  • Compact TO-252 package suitable for surface mounting on PCBs.
  • Maximum power dissipation of 3.8 W enables robust thermal performance.
  • Wide operating temperature range from -55°C to 150°C ensures durability.
  • Designed to meet AEC-Q101 automotive industry standard for quality and reliability.
  • Minimum DC current gain (hFE) of 60 supports efficient transistor operation.
  • Pin configuration includes 3 pins optimized for easy integration into power electronics.
  • Ideal for use in power management, automotive, and industrial semiconductor applications.

Product Description

DiodesZetex ZXTN4004KTC is a Bipolar Power Transistor featuring NPN polarity, designed for surface mount with a TO-252 (DPAK) package configuration. It supports a maximum DC collector current of 1 ampere and a collector-emitter voltage rating of 150 volts, making it suitable for power switching and amplification tasks in electronic circuits.

This transistor has a maximum power dissipation of 3.8 watts and is capable of operating from a minimum temperature of -55 degrees Celsius up to a maximum of 150 degrees Celsius. The device features a minimum DC current gain (hFE) of 60 and meets the stringent AEC-Q101 automotive standard, demonstrating high reliability and quality for automotive and industrial applications.

The three-pin configuration facilitates easy mounting on circuit boards using surface mount technology. The package dimensions are approximately 6.7 millimeters in length, 10.41 millimeters in height, and 6.7 millimeters in width, optimizing it for compact electronic designs.

Reliable switching and amplification with NPN bipolar transistor configuration. Compact TO-252 package suitable for surface mounting and automated assembly. Supports maximum collector current of 1 ampere for medium power applications.

Voltage ratings include 150 V for collector-emitter and collector-base junctions. Power dissipation of 3.8 watts ensures adequate thermal management. Wide operating temperature range from -55°C to 150°C supports harsh environments.

Automotive-grade AEC-Q101 certification ensures high product quality. Ideal for applications in automotive electronics, power management circuits, and industrial devices.

This transistor is manufactured in China and supplied as a new product. It is suitable for engineers and technicians designing power amplification and switching circuits requiring robust and reliable transistor performance.

Explore more semiconductor components and power transistors within the Electronics & Electricals category at EnvMart to find compatible devices and accessories.

DiodesZetex Bipolar Power Transistor NPN 1 A 150 V 3-Pin DPAK Surface Mount TO-252 ZXTN4004KTC
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Frequently Asked Questions

The maximum DC collector current for this model is 1 ampere.

The collector-emitter voltage rating is 150 volts.

It has a maximum power dissipation of 3.8 watts.

The operating temperature range is from -55°C to 150°C.

This transistor features a 3-pin configuration optimized for surface mounting.

The minimum DC current gain (hFE) is 60.

It uses a TO-252 (DPAK) package type suitable for surface mounting.

Yes, it meets the AEC-Q101 automotive industry standard for quality and reliability.

The maximum collector-base voltage is also 150 volts.

The maximum emitter-base voltage (VEBO) is 7 volts.

It is manufactured in China.

It is ideal for power management, automotive, and industrial semiconductor applications.

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