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onsemi Bipolar Power Transistor 15 A 60 V 115 W TO-204 2-Pin NPN 2N3055G

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onsemi Bipolar Power Transistor 15 A 60 V 115 W TO-204 2-Pin NPN 2N3055G

Name: onsemi Bipolar Power Transistor 15 A 60 V 115 W TO-204 2-Pin NPN 2N3055G
Brand: onsemi
SKU: 396919
Price: 3.57 USD
Availability: InStock

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Category Bipolar Power Transistor Brand onsemi Condition New

Specifications

Country of Origin	Czech Republic
Brand	onsemi
Height	20.7mm
Length	39.37mm
Model	2N3055G
Width	26.67mm
Mount Type	Through Hole
Series	2N3055
Maximum Operating Temperature	200°C
Package Type	TO-204
Minimum Operating Temperature	-65°C
Pin Count	2
Maximum Collector Emitter Voltage Vceo	60V
Minimum DC Current Gain hFE	5
Transistor Polarity	NPN
Maximum Emitter Base Voltage VEBO	7V
Maximum Collector Base Voltage VCBO	100V
Maximum Power Dissipation Pd	115W
Maximum DC Collector Current Idc	15A
Transistor Configuration	Single
Maximum Transition Frequency ft	2.5MHz

Key Features

Designed for high power amplifier and switching amplifier applications.
Features NPN transistor polarity with a maximum power dissipation of 115 W.
Constructed with a 2-pin TO-204 metal package for through hole mounting.
Operates over a temperature range from -65°C to 200°C, suitable for industrial use.
Has a maximum transition frequency of 2.5 MHz and minimum DC current gain of 5.
Manufactured in Czech Republic with robust construction for reliability.
Complementary to MJ2955 PNP transistor series for amplifier designs.

Product Description

onsemi 2N3055G is a bipolar power transistor designed to handle a maximum DC collector current of 15 A and withstand a collector-emitter voltage of up to 60 V. Housed in a TO-204 metal package with 2 pins for through hole mounting, this NPN transistor is tailored for power amplifier and switching amplifier applications in industrial electronics.

The transistor supports a maximum power dissipation of 115 W, ensuring high efficiency in demanding circuits. It operates reliably in extreme environments, with an operating temperature range spanning from -65°C to 200°C, making it suitable for laboratory, manufacturing, and heavy industrial HVAC applications.

Featuring a minimum DC current gain (hFE) of 5 and a maximum transition frequency (ft) of 2.5 MHz, the 2N3055G offers robust electrical performance. Its physical dimensions of 39.37 mm length, 26.67 mm width, and 20.7 mm height facilitate effective integration into electronic systems requiring through-hole installation.

This transistor is manufactured in the Czech Republic and complies with relevant quality standards, though it carries no specific certifications or automotive qualifications. It is complemented by the MJ2955 PNP transistor for balanced circuit designs.

High collector current capacity of 15 A suitable for power circuits. Durable TO-204 metal package ensures long-term reliability. Operates efficiently over a wide temperature range (-65°C to 200°C). NPN polarity transistor optimized for amplifiers and switches.

Compact size facilitates easy installation in various applications. Maximum power dissipation of 115 W supports high power devices. Manufactured in Czech Republic with consistent quality. Complementary to MJ2955 transistor for circuit design versatility.

This onsemi Bipolar Power Transistor 2N3055G is ideal for applications in electronics manufacturing, industrial machinery, HVAC systems, and other demanding electrical environments. Browse the Electronics & Electricals category at EnvMart for more semiconductors and power transistors.