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| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 1.6mm |
| Length | 4.6mm |
| Model | ZXTN2010ZTA |
| Width | 4.25mm |
| Mount Type | Surface |
| Series | ZXTN2010Z |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-89 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 60V |
| Minimum DC Current Gain hFE | 20 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 7V |
| Maximum Collector Base Voltage VCBO | 150V |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 2.1W |
| Maximum DC Collector Current Idc | 5A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 130MHz |
| Diodes Inc ZXTN4000ZTA NPN Transistor, 1 A, 60 V, 3-Pin SOT-89Brand | DiodesZetex |
DiodesZetex ZXTN2010ZTA is a high-performance NPN bipolar transistor packaged in a 3-pin SOT-89 configuration, designed for surface mount applications. It supports a maximum DC collector current of 5 amperes and a maximum collector-emitter voltage of 60 volts, making it suitable for switching and amplification circuits in industrial, automotive, and consumer electronics.
The transistor operates over a wide temperature range, from -55°C to 150°C, offering robust thermal performance. It provides a minimum DC current gain (hFE) of 20 and a maximum power dissipation of 2.1 watts to maintain stability under load.
With a maximum transition frequency (ft) of 130 MHz, this transistor effectively handles high-frequency signals. Its compact SOT-89 package (4.6 mm x 4.25 mm x 1.6 mm) allows for efficient PCB layout in space-constrained assemblies.
The device complies with the automotive AEC-Q101 standard, ensuring suitability for automotive and harsh environment applications. It features a transistor polarity of NPN and a single transistor configuration.
Maximum DC collector current of 5 A for powerful switching. Collector-emitter voltage rated at 60 V for safe operation. Surface mount SOT-89 package for compact design. Operating temperature range from -55°C to 150°C. Minimum current gain (hFE) of 20 ensures effective amplification.
Power dissipation at 2.1 W to handle thermal loads. High transition frequency of 130 MHz suitable for RF and switching applications. Certified to automotive standard AEC-Q101 for quality assurance. Physical dimensions ensure compatibility with standard PCB layouts.
This transistor is ideal for use in industrial, automotive, telecommunication, and power management applications. Its high current and voltage ratings, combined with reliable gain and packaging, support robust circuit designs.
Explore the Electronics & Electricals > Semiconductor > Bipolar Transistors category for similar high-quality components suitable for your design requirements.
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