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DiodesZetex NPN Bipolar Transistor 5 A 60 V 3-Pin SOT-89 Surface Mount ZXTN2010ZTA

Category Transistor Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 1.6mm
Length 4.6mm
Model ZXTN2010ZTA
Width 4.25mm
Mount Type Surface
Series ZXTN2010Z
Maximum Operating Temperature 150°C
Package Type SOT-89
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 60V
Minimum DC Current Gain hFE 20
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 7V
Maximum Collector Base Voltage VCBO 150V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 2.1W
Maximum DC Collector Current Idc 5A
Transistor Configuration Single
Maximum Transition Frequency ft 130MHz
Diodes Inc ZXTN4000ZTA NPN Transistor, 1 A, 60 V, 3-Pin SOT-89Brand DiodesZetex

Key Features

  • This transistor has a maximum DC collector current of 5 amperes.
  • Maximum collector-emitter voltage is 60 volts for efficient switching and amplification.
  • It features a compact SOT-89 package suitable for surface mounting.
  • The device operates within a temperature range from -55°C to 150°C.
  • It offers a minimum DC current gain (hFE) of 20 for reliable performance.
  • The maximum power dissipation is rated at 2.1 watts.
  • The maximum transition frequency is 130 MHz, ideal for high-frequency applications.
  • Automotive grade with AEC-Q101 certification ensuring quality and reliability.

Product Description

DiodesZetex ZXTN2010ZTA is a high-performance NPN bipolar transistor packaged in a 3-pin SOT-89 configuration, designed for surface mount applications. It supports a maximum DC collector current of 5 amperes and a maximum collector-emitter voltage of 60 volts, making it suitable for switching and amplification circuits in industrial, automotive, and consumer electronics.

The transistor operates over a wide temperature range, from -55°C to 150°C, offering robust thermal performance. It provides a minimum DC current gain (hFE) of 20 and a maximum power dissipation of 2.1 watts to maintain stability under load.

With a maximum transition frequency (ft) of 130 MHz, this transistor effectively handles high-frequency signals. Its compact SOT-89 package (4.6 mm x 4.25 mm x 1.6 mm) allows for efficient PCB layout in space-constrained assemblies.

The device complies with the automotive AEC-Q101 standard, ensuring suitability for automotive and harsh environment applications. It features a transistor polarity of NPN and a single transistor configuration.

Maximum DC collector current of 5 A for powerful switching. Collector-emitter voltage rated at 60 V for safe operation. Surface mount SOT-89 package for compact design. Operating temperature range from -55°C to 150°C. Minimum current gain (hFE) of 20 ensures effective amplification.

Power dissipation at 2.1 W to handle thermal loads. High transition frequency of 130 MHz suitable for RF and switching applications. Certified to automotive standard AEC-Q101 for quality assurance. Physical dimensions ensure compatibility with standard PCB layouts.

This transistor is ideal for use in industrial, automotive, telecommunication, and power management applications. Its high current and voltage ratings, combined with reliable gain and packaging, support robust circuit designs.

Explore the Electronics & Electricals > Semiconductor > Bipolar Transistors category for similar high-quality components suitable for your design requirements.

DiodesZetex NPN Bipolar Transistor 5 A 60 V 3-Pin SOT-89 Surface Mount ZXTN2010ZTA
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Frequently Asked Questions

The maximum DC collector current for this model is 5 amperes.

The maximum collector-emitter voltage is rated at 60 volts.

This transistor operates within a temperature range from -55°C to 150°C.

The minimum DC current gain (hFE) is 20, ensuring effective amplification.

The maximum power dissipation is rated at 2.1 watts.

The maximum transition frequency is 130 MHz, suitable for high-frequency applications.

It is packaged in a compact SOT-89 configuration, which is suitable for surface mounting.

The dimensions are 4.6 mm in length, 4.25 mm in width, and 1.6 mm in height.

This model complies with the automotive AEC-Q101 standard, ensuring quality and reliability.

The transistor polarity is NPN.

It is suitable for industrial, automotive, telecommunication, and power management applications.

The maximum emitter-base voltage (VEBO) is 7 volts.

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