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DiodesZetex General Purpose NPN Transistor 600 mA, 40 V, 4-Pin SOT-223 DZT2222A-13

Category Transistor Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 1.8mm
Length 6.55mm
Model DZT2222A-13
Width 7.1mm
Mount Type Surface
Series DZT2222A
Maximum Operating Temperature 150°C
Package Type SOT-223
Minimum Operating Temperature -55°C
Pin Count 4
Maximum Collector Emitter Voltage Vceo 40V
Minimum DC Current Gain hFE 35
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 75V
Maximum Power Dissipation Pd 1W
Maximum DC Collector Current Idc 600mA
Transistor Configuration Single
Maximum Transition Frequency ft 300MHz

Key Features

  • This transistor features a maximum power dissipation of 1 W.
  • It has a minimum DC current gain (hFE) of 35, ensuring reliable amplification.
  • The component operates across a temperature range of -55°C to 150°C.
  • The package is surface mount type, designed for easy PCB assembly.
  • It offers a maximum transition frequency (ft) of 300 MHz for high-frequency switching applications.
  • The transistor has a maximum collector-base voltage of 75 V and emitter-base voltage of 6 V.
  • Physical dimensions include a height of 1.8 mm, length of 6.55 mm, and width of 7.1 mm.
  • Pin count is 4 with a single transistor configuration and NPN polarity.

Product Description

DiodesZetex DZT2222A-13 transistor is a robust general purpose NPN bipolar transistor designed for a wide range of electronic applications. Rated for a maximum DC collector current of 600 mA and a collector-emitter voltage of 40 V, it efficiently handles moderate power and switching demands. The device incorporates a surface mount SOT-223 4-pin package, facilitating compact PCB layouts and automated assembly.

The transistor features a minimum DC current gain (hFE) of 35, making it suitable for amplification and switching tasks in consumer electronics, industrial equipment, and communication systems. It operates reliably within a broad temperature spectrum from -55°C to 150°C, ensuring durability in harsh environments.

This device’s maximum power dissipation of 1 W and maximum transition frequency of 300 MHz support efficient high-frequency switching applications typical in modern electronics and power management circuits. The maximum collector-base voltage of 75 V and emitter-base voltage of 6 V provide added robustness in circuit design.

Physical size specifications of height 1.8 mm, length 6.55 mm, and width 7.1 mm allow for easy integration into compact designs. The 4-pin single transistor configuration ensures ease of wiring and operational consistency.

This transistor provides reliable switching and amplification in industrial and consumer electronic circuits. The SOT-223 package supports automated surface mounting on printed circuit boards. Suitable for use in communication devices, power supplies, and general purpose amplification.

Designed to operate under a wide temperature range suitable for harsh environments. The device meets common quality standards with no specific certifications listed.

Ideal for electronic designers needing a dependable NPN transistor that balances power, frequency response, and package convenience. Explore similar bipolar Transistors and other semiconductor components in our Electronics & Electricals portfolio on EnvMart.

DiodesZetex General Purpose NPN Transistor 600 mA, 40 V, 4-Pin SOT-223 DZT2222A-13
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Frequently Asked Questions

The maximum DC collector current for this model is 600 mA.

This transistor has a maximum collector-emitter voltage rating of 40 V.

It operates within a temperature range of -55°C to 150°C.

The maximum power dissipation for this model is 1 W.

The minimum DC current gain (hFE) for this transistor is 35.

The dimensions are 1.8 mm in height, 6.55 mm in length, and 7.1 mm in width.

This model uses a surface mount SOT-223 package type.

The maximum transition frequency for this transistor is 300 MHz.

This transistor has a pin count of 4.

The maximum collector-base voltage is 75 V, and the maximum emitter-base voltage is 6 V.

This transistor has an NPN polarity.

The DZT2222A-13 is manufactured in India.

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