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DiodesZetex High Voltage NPN Transistor, 200 mA, 300 V, 3-Pin SOT-323 MMSTA42-7-F

Category Transistor Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 1.1mm
Length 2.2mm
Model MMSTA42-7-F
Width 2.2mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-323
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 300V
Minimum DC Current Gain hFE 25
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 300V
Maximum Power Dissipation Pd 200mW
Maximum DC Collector Current Idc 200mA
Transistor Configuration Single

Key Features

  • The transistor is designed with a maximum power dissipation of 200 mW.
  • It supports operation over a wide temperature range from -55°C to 150°C.
  • The minimum DC current gain (hFE) is 25, ensuring efficient switching.
  • Surface mount type allows easy PCB assembly and compact designs.
  • The transistor is a single configuration NPN type suitable for high voltage applications.
  • Package dimensions are 2.2 mm length, 2.2 mm width, and 1.1 mm height.
  • Maximum collector base voltage is 300 V while emitter base voltage maximum is 6 V.
  • It has 3 pins and no special automotive standards compliance.

Product Description

DiodesZetex MMSTA42-7-F is a high voltage NPN bipolar transistor designed for applications requiring up to 200 mA maximum DC collector current and collector emitter voltage of 300 V. Housed in a compact 3-pin SOT-323 surface mount package, this transistor is suitable for various electronic circuits including power switching and amplification.

The device supports a wide operating temperature range from -55°C to 150°C, making it reliable in harsh industrial and commercial environments. It features a maximum power dissipation of 200 mW and a minimum DC current gain (hFE) of 25 ensuring good amplification efficiency.

With precise pin configuration and small size (2.2 mm length, 2.2 mm width, 1.1 mm height), the transistor enables compact PCB layouts in communication, control, and signal processing systems. While it lacks special automotive standards certification, it meets general industrial requirements.

The transistor topology is single NPN with 3 pins designed for surface mount technology. Maximum collector base voltage and collector emitter voltage ratings are both 300 V, supporting high voltage circuit designs. Emitter base voltage maximum rating is 6 V.

Thermal and electrical stability at elevated temperatures up to 150°C. Compact package dimensions optimize space-saving on PCBs. Low power dissipation of 200 mW suitable for low-power applications. Ideally used in electronic devices, power management circuits, and industrial automation.

The MMSTA42-7-F transistor is widely applied in electronic components across industrial, laboratory, telecommunications, and manufacturing assemblies. It facilitates efficient switching and amplification functions in power supplies, signal conditioning, and digital logic interfaces.

Explore EnvMart’s comprehensive range of semiconductor Transistors for diverse power, switching, and amplifier requirements to complement this device in your design projects.

DiodesZetex High Voltage NPN Transistor, 200 mA, 300 V, 3-Pin SOT-323 MMSTA42-7-F
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Frequently Asked Questions

The maximum DC collector current for the MMSTA42-7-F transistor is 200 mA.

This model has a maximum collector-emitter voltage rating of 300 V.

It operates over a wide temperature range from -55°C to 150°C.

The transistor is housed in a compact SOT-323 package.

The minimum DC current gain (hFE) for the MMSTA42-7-F is 25.

This transistor has 3 pins.

The maximum power dissipation is 200 mW.

The MMSTA42-7-F is a single NPN configuration type.

The maximum emitter-base voltage rating is 6 V.

The dimensions are 2.2 mm in length, 2.2 mm in width, and 1.1 mm in height.

This transistor is suitable for power switching and amplification in various electronic circuits.

The country of origin for this transistor is India.

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