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STMicroelectronics 15 A NPN Bipolar Power Transistor 100 V, TO-220, 3-Pin BD911
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 29.75mm |
| Length | 10.4mm |
| Model | BD911 |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 100V |
| Minimum DC Current Gain hFE | 15 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Base Voltage VCBO | 100V |
| Maximum Power Dissipation Pd | 90W |
| Maximum DC Collector Current Idc | 15A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 3MHz |
| Taiwan Semiconductor TSC742CZ COG NPN Transistor, 5 A, 420 V, 3-Pin TO-220Brand | Taiwan Semiconductor |
Key Features
- This transistor supports a maximum DC collector current of 15 amperes.
- It features a maximum collector-emitter voltage of 100 volts suitable for power applications.
- The device is housed in a TO-220 through-hole package with 3 pins.
- The transistor polarity is NPN and the minimum DC current gain (hFE) is 15.
- Maximum power dissipation is 90 watts, allowing for high power handling.
- Maximum operating temperature is 150 degrees Celsius, supporting harsh environments.
- The maximum transition frequency is 3 MHz.
- Physical dimensions include a height of 29.75 mm, length of 10.4 mm, and width of 4.6 mm.
Product Description
STMicroelectronics BD911 is a NPN bipolar power transistor designed for high current and voltage applications, featuring a 15 A maximum DC collector current and 100 V maximum collector-emitter voltage. Encapsulated in a TO-220 3-pin package suited for through-hole mounting, it provides robust performance and reliable operation in demanding power electronics environments.
The transistor offers a minimum DC current gain (hFE) of 15 and supports a maximum power dissipation of 90 W, making it ideal for power switching and amplification circuits. It has a maximum operating temperature of 150 degrees Celsius, ensuring durability in industrial and electronic systems exposed to elevated heat.
Its maximum transition frequency is 3 MHz, suitable for moderate frequency switching applications. Physical dimensions include a height of 29.75 mm, length of 10.4 mm, and width of 4.6 mm, providing compatibility with standard PCB layouts.
The STMicroelectronics BD911 transistor is widely used in power management, industrial control, and electronic component assemblies. Applications include motor control, power regulation, and switching circuits in electronic devices and systems.
This transistor supports a maximum DC collector current of 15 amperes. It features a maximum collector-emitter voltage of 100 volts suitable for power applications. The device is housed in a TO-220 through-hole package with 3 pins.
The transistor polarity is NPN and the minimum DC current gain (hFE) is 15. Maximum power dissipation is 90 watts, allowing for high power handling. Maximum operating temperature is 150 degrees Celsius, supporting harsh environments.
The maximum transition frequency is 3 MHz. Physical dimensions include a height of 29.75 mm, length of 10.4 mm, and width of 4.6 mm. Designed by STMicroelectronics, a leader in semiconductor manufacturing. Suited for applications in industrial, electronic, power management, and HVAC systems.
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Frequently Asked Questions
The maximum DC collector current for this model is 15 amperes.
It features a maximum collector-emitter voltage of 100 volts, suitable for power applications.
The maximum power dissipation is 90 watts, allowing for high power handling.
The physical dimensions include a height of 29.75 mm, length of 10.4 mm, and width of 4.6 mm.
This model is housed in a TO-220 through-hole package with 3 pins.
The maximum operating temperature is 150 degrees Celsius, supporting harsh environments.
The minimum DC current gain (hFE) is 15.
The maximum transition frequency is 3 MHz, suitable for moderate frequency switching applications.
The transistor polarity is NPN, allowing for specific applications in power management.
The maximum emitter-base voltage (VEBO) is 5 volts.
This transistor is widely used in power management, industrial control, and electronic component assemblies, including motor control and power regulation.
The maximum collector-base voltage (VCBO) is 100 volts.
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