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Infineon IGBT Single Transistor IC TO-220 Package 28 A 650 V IKP28N65ES5XKSA1

Category IGBT Single Transistor IC Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Model IKP28N65ES5XKSA1
Series 5th Generation
Maximum Operating Temperature 175°C
Package Type TO-220
Minimum Operating Temperature -40°C
Standards/Approvals JEDEC47/20/22
Maximum Continuous Collector Current Ic 28A
Maximum Collector Emitter Voltage Vceo 650V
Maximum Collector Emitter Saturation Voltage VceSAT 1.9V
Maximum Power Dissipation Pd 130W
Maximum Gate Emitter Voltage VGEO ±20 ±30 V

Key Features

  • Equipped with a TO-220 package for easy integration.
  • Maximum power dissipation of 130 W supports high power applications.
  • Features high speed smooth switching suitable for hard and soft switching.
  • Operates reliably up to 175°C junction temperature.
  • Includes an anti-parallel diode enhancing circuit protection.
  • No need for gate clamping components enhances design simplicity.
  • Supports operating temperatures from -40°C to 175°C.
  • Complies with JEDEC47/20/22 standards for quality and reliability.

Product Description

Infineon IKP28N65ES5XKSA1 is a high-performance IGBT Single Transistor IC in a TO-220 package, capable of handling a maximum continuous collector current of 28 A and a maximum collector emitter voltage of 650 V. This 5th generation device integrates an anti-parallel diode and is designed for high current density and high efficiency applications.

The transistor offers a maximum power dissipation of 130 W, making it suitable for demanding power electronic circuits. It supports a wide operating temperature range from -40°C up to 175°C junction temperature, ensuring robustness in harsh environmental conditions.

With a maximum gate emitter voltage of ±20 to ±30 V and a low collector emitter saturation voltage of 1.9 V, the IKP28N65ES5XKSA1 provides smooth and fast switching capabilities, reducing losses in both hard and soft switching environments. Its design eliminates the need for gate clamping components, simplifying circuit design and PCB layout.

This device meets JEDEC47/20/22 standards, providing assurance of quality and reliability for industrial, automotive, and power management applications. It is ideal for use in industrial motor drives, power inverters, welding machines, renewable energy systems, and other high-efficiency power circuits.

High current density and efficiency with 28 A collector current. TO-220 package supports easy heat dissipation and mounting. Robust operation over a wide temperature range (-40°C to 175°C). Integrated anti-parallel diode for enhanced functionality.

Compliant with JEDEC standards for reliability. Eliminates need for gate clamping components, reducing PCB complexity. Optimized for high speed smooth switching in power electronic applications. Suitable for industrial, automotive, and commercial power electronics.

This product is a key component for designers aiming to optimize power efficiency and reliability in semiconductor-based switching environments. Explore more high-quality semiconductor components in the Semiconductor category at EnvMart.

Infineon IGBT Single Transistor IC TO-220 Package 28 A 650 V IKP28N65ES5XKSA1
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Frequently Asked Questions

The maximum continuous collector current for the IKP28N65ES5XKSA1 is 28 A.

The maximum collector emitter voltage (Vceo) is 650 V.

This IGBT can handle a maximum power dissipation of 130 W.

It operates reliably over a temperature range from -40°C to 175°C.

Yes, the IKP28N65ES5XKSA1 integrates an anti-parallel diode, enhancing circuit protection.

It comes in a TO-220 package, which supports easy integration and heat dissipation.

This model complies with JEDEC47/20/22 standards for quality and reliability.

The maximum gate emitter voltage (VGEO) is ±20 to ±30 V.

The maximum collector emitter saturation voltage (VceSAT) is 1.9 V.

It is suitable for industrial motor drives, power inverters, welding machines, and renewable energy systems.

The IKP28N65ES5XKSA1 is part of the 5th generation of IGBT technology.

This IGBT eliminates the need for gate clamping components, simplifying circuit design and PCB layout.

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