Infineon N-Channel IGBT Single Transistor IC 60 A 1200 V 3-Pin TO-247 Through Hole IHW30N120R5XKSA1

Infineon IHW30N120R5XKSA1 is a N-Channel IGBT Single Transistor IC optimized for industrial high-voltage switching applications, providing 60 A continuous collector current and 1200 V maximum collector-emitter voltage in a 3-pin TO-247 through-hole package. This device is part of the Infineon Resonant Switching series, engineered for demanding power electronics environments requiring efficient conduction and thermal reliability.

The transistor supports a maximum power dissipation of 330 W, enabling it to handle substantial power loads effectively. With a low collector-emitter saturation voltage (VCE(sat)) of 1.55 V, it delivers reduced losses during conduction, optimizing the overall system efficiency. The device’s gate-emitter voltage maximum rating of 25 V safeguards against gate overdrive, enhancing transistor durability and performance.

It operates reliably within a broad temperature range from -40 °C to 175 °C, making it suitable for thermally demanding applications. Mounting is through-hole, ensuring mechanical stability and facilitating heat sink integration for thermal management. This transistor is ideal for resonant converter power stages, high-voltage power supplies, switch modules needing 60 A continuous operation, and industrial power boards where serviceability is needed.

Key applications include industrial resonant converter topologies, robust power supplies supporting high voltage and current, and thermally stressed industrial environments. The device’s dimensions (42 mm length, 16.13 mm width, 5.21 mm height) and pin configuration comply with standard power board layouts, easing integration into existing systems.

This IGBT supports a maximum continuous collector current of 60 A. Maximum collector-emitter voltage rating of 1200 V ensures suitability for high-voltage switching. Maximum power dissipation of 330 W enables handling of high power loads.

Three-pin TO-247 package offers reliable through-hole mounting and heat dissipation. Operating temperature range from -40 °C to 175 °C for industrial reliability. Low collector-emitter saturation voltage of 1.55 V reduces conduction losses.

Gate-emitter voltage max of ±25 V protects transistor gate from damage. Part of the Resonant Switching series optimized for resonance converters. Designed for use in power supplies, switch modules, and thermally demanding industrial applications.

Suitable for through-hole assembly and serviceable power board designs. Explore more components and similar IGBT solutions on EnvMart for advanced electronics and industrial power applications.