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Infineon N-Channel IGBT Single Transistor IC, 53 A, 600 V, 3-Pin TO-247 Through Hole IKFW60N60DH3EXKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IKFW60N60DH3EXKSA1 |
| Mount Type | Through Hole |
| Series | TRENCHSTOPTM Advanced Isolation |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -40°C |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 53A |
| Maximum Collector Emitter Voltage Vceo | 600V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.2V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 141W |
| Maximum Gate Emitter Voltage VGEO | ±30 V |
Key Features
- High efficiency with low switching losses for improved energy savings.
- Fully isolated package design enhances reliability in power applications.
- Maximum power dissipation of 141 W supports robust operation.
- Wide operating temperature range from -40°C to 175°C ensures durability under harsh conditions.
- ±30 V maximum gate emitter voltage allows flexible gate drive designs.
- Low collector emitter saturation voltage of 2.2 V reduces conduction losses.
- Rapid and soft antiparallel diode copackaged for effective reverse recovery characteristics.
- Optimized for industrial, automotive, and power electronics applications.
Product Description
Infineon IKFW60N60DH3EXKSA1 is an N-Channel Insulated-Gate Bipolar Transistor (IGBT) single transistor IC, designed to deliver high efficiency and reliability in power switching applications. It supports a continuous collector current of 53 A and can handle a maximum collector emitter voltage of 600 V, making it suitable for medium to high power circuits.
This transistor comes in a 3-pin TO-247 through hole package, offering a fully isolated design that improves safety and reduces electromagnetic interference. The device integrates a rapid and soft antiparallel diode, enhancing switching performance and reducing losses in inverted polarity scenarios.
With a maximum power dissipation rating of 141 W and an operating temperature range from -40°C to 175°C, the IKFW60N60DH3EXKSA1 is built to reliably withstand demanding environmental and electrical stresses. Its gate emitter voltage tolerance of ±30 V and collector emitter saturation voltage of 2.2 V contribute to efficient power management with minimal conduction loss.
This IGBT transistor is ideal for use in industrial power supplies, motor control circuits, renewable energy inverters, and automotive electronics where high power density and reliability are critical. The device is designed following Infineon's proprietary TRENCHSTOP™ Advanced Isolation technology, providing optimized performance and longer device life span.
High efficiency with low switching losses for improved energy savings. Fully isolated TO-247 package reduces electrical noise and enhances safety. Copackaged rapid and soft antiparallel diode improves reverse recovery. Robust power dissipation capacity of 141 W for heavy-duty applications.
Wide temperature range enables operation in harsh environments from -40°C to 175°C. ±30 V gate emitter voltage supports versatile gate driver designs. Compact 3-pin design simplifies PCB layout and assembly. Suitable for industrial, automotive, and commercial power electronics use cases.
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Frequently Asked Questions
The maximum continuous collector current for the IKFW60N60DH3EXKSA1 is 53 A.
This model can handle a maximum collector emitter voltage of 600 V.
The maximum power dissipation rating is 141 W, allowing for robust operation in power applications.
It operates within a wide temperature range from -40°C to 175°C.
The maximum gate emitter voltage for this model is ±30 V, which supports versatile gate driver designs.
The IKFW60N60DH3EXKSA1 is packaged in a 3-pin TO-247 through hole design.
The collector emitter saturation voltage for this transistor is 2.2 V, which helps reduce conduction losses.
It is suitable for industrial power supplies, motor control circuits, renewable energy inverters, and automotive electronics.
This model is designed using Infineon's TRENCHSTOP™ Advanced Isolation technology, enhancing performance and reliability.
The rapid and soft antiparallel diode copackaged with this IGBT enhances switching performance and reduces losses during reverse recovery.
The IKFW60N60DH3EXKSA1 has a pin count of 3.
The country of origin for this IGBT is India.
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