$2.11
$2.05
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Infineon N-Channel IGBT Single Transistor IC 30 A 650 V 105 W 3-Pin TO-263 Surface Mount IKB15N65EH5ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IKB15N65EH5ATMA1 |
| Mount Type | Surface |
| Series | High Speed Fifth Generation |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | JEDEC47/20/22 |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 30A |
| Maximum Collector Emitter Voltage Vceo | 650V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.65V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 105W |
| Maximum Gate Emitter Voltage VGEO | ±30 V |
Key Features
- Equipped with a 3-pin TO-263 package for surface mounting.
- Provides a maximum power dissipation of 105 watts allowing efficient operation.
- Features a high gate-emitter voltage tolerance of ±30 V for robust switching performance.
- Operates reliably within temperature ranges from -40°C to 175°C.
- Designed with low switching losses and high efficiency in mind.
- Complies with JEDEC47/20/22 standards ensuring quality and reliability.
- Constructed as a high speed fifth generation IGBT series component.
- Includes a fully rated current rapid 1 antiparallel diode integrated in the device.
Product Description
Infineon IKB15N65EH5ATMA1 is a high-performance N-Channel Insulated Gate Bipolar Transistor (IGBT) single transistor IC designed for power electronics applications requiring high current and voltage capabilities.
This transistor is encapsulated in a 3-pin TO-263 surface mount package, enabling easy integration into printed circuit board assemblies with optimal thermal management.
Rated for a maximum continuous collector current of 30 amperes and a maximum collector-emitter voltage of 650 volts, it supports demanding power switching and amplification use cases.
The device can dissipate up to 105 watts of power, making it suitable for high efficiency and low switching loss applications in both industrial and commercial settings. It maintains operational stability over a wide temperature range from minus 40 to 175 degrees Celsius, suitable for harsh environments and robust industrial equipment.
Designed with a maximum gate-emitter voltage of ±30 volts, the device allows for flexible gate drive conditions and improved switching control.
As part of Infineon’s high speed fifth generation series, this IGBT benefits from the integration of a full rated current rapid 1 antiparallel diode which enhances switching efficiency and reduces electromagnetic interference.
Maximum continuous collector current: 30 A. Collector-emitter voltage rating: 650 V. Maximum power dissipation: 105 W. 3-pin TO-263 surface mount package. Operating temperature range: -40°C to 175°C. Gate-emitter voltage tolerance ±30 V.
Complies with JEDEC 47/20/22 standards. High speed fifth generation series device. Low switching losses and increased reliability. Applications include power supplies, motor drives, and industrial power control.
This transistor is well suited for industrial, manufacturing, power control, and electronic component assembly applications requiring high efficiency and rapid switching capabilities.
Explore the Electronics & Electricals category for more advanced Infineon semiconductor components and related power management devices on EnvMart.
Explore more products in our IGBT Single Transistor IC category.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous collector current for this model is 30 amperes.
This transistor has a collector-emitter voltage rating of 650 volts.
The maximum power dissipation for this IGBT is 105 watts.
It operates reliably within a temperature range from -40°C to 175°C.
This model is encapsulated in a 3-pin TO-263 surface mount package.
It complies with JEDEC47/20/22 standards, ensuring quality and reliability.
The maximum gate-emitter voltage tolerance is ±30 volts.
This model is part of Infineon's high speed fifth generation series.
Yes, it includes a fully rated current rapid 1 antiparallel diode integrated in the device.
It features an N-channel design.
The maximum collector-emitter saturation voltage for this model is 1.65 volts.
This IGBT is suitable for applications including power supplies, motor drives, and industrial power control.
Related Products
$0.47
$0.46
-3%
New
$1.22
$1.19
-3%
New
Other Products from this brand
$19.84
$19.24
-3%
New
$2.11
$2.05
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent