Infineon N-Channel IGBT Single Transistor IC, 60 A, 650 V, 3-Pin TO-247 Through Hole IHW30N65R5XKSA1

Infineon IHW30N65R5XKSA1 is an N-Channel IGBT Single Transistor IC designed for industrial and electronic power applications. With a maximum continuous collector current of 60 A and collector emitter voltage rating of 650 V, this IC is suitable for high power switching and control tasks in automotive, industrial automation, and power control circuits.

This device comes in a robust 3-pin TO-247 through hole package, providing efficient heat dissipation and ease of mounting. It supports high power dissipation up to 176 W, enabling reliable performance under demanding electrical loads.

The transistor features a maximum gate emitter voltage of 20 V and a low collector emitter saturation voltage of 1.7 V, which contributes to reduced switching losses and higher efficiency. Its operating temperature range from -40°C to 175°C ensures durability across harsh environments.

Notably, this transistor is part of Infineon's resonant switching series with an integrated reverse conduction body diode, improving switching speed and lowering electromagnetic interference in circuits.

High efficiency with low switching losses. Maximum power dissipation of 176 W for robust performance. Wide operating temperature range from -40°C to 175°C. Through hole TO-247 package for ease of mounting. Maximum gate emitter voltage of 20 V supports reliable control.

Includes monolithic body diode for enhanced reverse conduction. Low saturation voltage ensures energy efficiency. Compliant with RoHS standards ensuring environmental safety.

Commonly used in power electronics, motor drives, and industrial automation, this IGBT transistor enables efficient switching and solid performance. It is well suited for applications requiring reliable high voltage and current control. Explore the Infineon product range for more semiconductor solutions in power management at EnvMart.