$0.47
$0.46
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Infineon IGBT Single Transistor IC 4 A 600 V PG-SOT223 IKN04N60RC2ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IKN04N60RC2ATMA1 |
| Maximum Operating Temperature | 150°C |
| Package Type | PG-SOT223 |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | JEDEC47/20/22 |
| Maximum Continuous Collector Current Ic | 4A |
| Maximum Collector Emitter Voltage Vceo | 600V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.3V |
| Maximum Power Dissipation Pd | 6.8W |
| Maximum Gate Emitter Voltage VGEO | 20 V |
Key Features
- Supports a maximum continuous collector current of 4 amperes.
- Maximum collector emitter voltage rating of 600 volts ensures high voltage operation.
- Comes in a compact PG-SOT223 package suited for efficient thermal management.
- Maximum power dissipation of 6.8 watts allows operation under moderate power conditions.
- Maximum gate emitter voltage of 20 volts protects against overstress at the gate terminal.
- Collector emitter saturation voltage of 2.3 volts optimizes conduction losses.
- Operating temperature range from -40 to 150 degrees Celsius ensures reliability in harsh environments.
- Meets JEDEC standards 47/20/22 for quality and performance.
Product Description
Infineon IKN04N60RC2ATMA1 is a high-performance IGBT single transistor integrated circuit designed to handle a maximum continuous collector current of 4 A and a maximum collector emitter voltage of 600 V. It is housed in a PG-SOT223 package which supports effective heat dissipation and compact PCB layouts.
This device has a maximum power dissipation rating of 6.8 W and a maximum gate emitter voltage rating of 20 V, providing robust performance while ensuring gate protection. The collector emitter saturation voltage is only 2.3 V, minimizing conduction losses during operation.
The operating temperature range from -40°C to 150°C makes this transistor suitable for use in demanding industrial, manufacturing, and power distribution environments, even at elevated temperatures.
It complies with JEDEC47/20/22 standards assuring stable and reliable performance. However, it does not conform to specific automotive standards, thus recommended primarily for industrial and power electronics applications.
The monolithically integrated diode reduces switching losses and enhances controllability compared to prior designs, helping to improve overall system efficiency. Supports a maximum continuous collector current of 4 amperes.
Maximum collector emitter voltage rating of 600 volts ensures high voltage operation. Compact PG-SOT223 package provides effective thermal dissipation. Maximum power dissipation of 6.8 watts allows moderate power handling.
Maximum gate emitter voltage of 20 volts protects the gate from overstress. Low collector emitter saturation voltage of 2.3 volts reduces conduction losses. Wide operating temperature range from -40 to 150 degrees Celsius.
Complies with JEDEC47/20/22 performance standards. Integrated diode improves performance and reliability. Ideal for power electronics, industrial control, manufacturing, and water treatment applications. This product is suitable for industrial design projects and power control circuits.
Explore more transistor ICs and power semiconductor devices on EnvMart for reliable industrial applications.
Explore more products in our IGBT Single Transistor IC category.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous collector current for the Infineon IKN04N60RC2ATMA1 is 4 amperes.
This model has a maximum collector emitter voltage rating of 600 volts, allowing for high voltage operation.
The maximum power dissipation for this transistor is 6.8 watts, suitable for moderate power handling conditions.
The maximum gate emitter voltage rating is 20 volts, which protects against overstress at the gate terminal.
The collector emitter saturation voltage is 2.3 volts, which helps to minimize conduction losses during operation.
It operates within a temperature range of -40°C to 150°C, making it suitable for harsh environments.
This IGBT is housed in a compact PG-SOT223 package, which supports effective thermal management.
It complies with JEDEC standards 47/20/22 for quality and performance.
This model is ideal for power electronics, industrial control, manufacturing, and water treatment applications.
Yes, it features a monolithically integrated diode that reduces switching losses and enhances controllability.
The Infineon IKN04N60RC2ATMA1 is manufactured in India.
The low collector emitter saturation voltage of 2.3 volts helps to optimize conduction losses, improving overall efficiency.
Related Products
$1.22
$1.19
-3%
New
Other Products from this brand
$19.84
$19.24
-3%
New
Recently Viewed Products
$0.47
$0.46
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent