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Infineon IGBT Single Transistor IC, 80 A, 650 V, 3-Pin TO-247 Through Hole AIGW50N65F5XKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | AIGW50N65F5XKSA1 |
| Mount Type | Through Hole |
| Series | High Speed Fifth Generation |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | AEC-Q101 |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 80A |
| Maximum Collector Emitter Voltage Vceo | 650V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.66V |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 270W |
| Maximum Gate Emitter Voltage VGEO | ±30 V |
Key Features
- Supports a maximum continuous collector current of 80 A.
- Maximum collector emitter voltage rating of 650 V ensures robust performance.
- Features a 3-pin TO-247 package ideal for through hole mounting.
- Maximum power dissipation capability of 270 W for handling demanding loads.
- Maximum gate emitter voltage rated at ±30 V for enhanced gate control.
- Maximum collector emitter saturation voltage (VceSAT) is low at 1.66 V for energy-efficient switching.
- Operating temperature range from -40°C to 175°C suitable for automotive and industrial environments.
- Meets AEC-Q101 automotive standard and belongs to the High Speed Fifth Generation series.
Product Description
Infineon AIGW50N65F5XKSA1 is a high-performance IGBT Single Transistor IC engineered for efficient power switching applications in automotive, industrial, and manufacturing sectors. Rated for a 80 A maximum continuous collector current and 650 V maximum collector emitter voltage, this device delivers reliable operation under challenging thermal and electrical conditions.
Packaged in a robust 3-pin TO-247 through hole mounting format, this transistor features a maximum power dissipation of 270 W, making it suitable for high power applications requiring stable thermal management. The maximum gate emitter voltage of ±30 V facilitates precise gate control, enhancing switching efficiency and device longevity.
With a maximum saturation voltage of 1.66 V, the AIGW50N65F5XKSA1 supports low conduction losses, improving overall system energy efficiency. Its operating temperature range from -40°C to 175°C enables usage in both harsh automotive environments and industrial settings.
Certified to meet the AEC-Q101 automotive qualification standard, this transistor belongs to Infineon's high-speed fifth generation IGBT series, ensuring fast switching capabilities, low electromagnetic interference, and increased reliability.
Supports a maximum continuous collector current of 80 A. Maximum collector emitter voltage rating of 650 V. 3-Pin TO-247 package with through hole mount type. Power dissipation up to 270 W. ±30 V maximum gate emitter voltage.
Maximum collector emitter saturation voltage of 1.66 V. Operating temperature range from -40°C to 175°C. AEC-Q101 certified for automotive use. Belongs to the High Speed Fifth Generation series.
This Infineon IGBT transistor is ideal for power electronics applications such as industrial motor drives, power supplies, inverters, and automotive electronics. Its reliable operation under extreme conditions makes it suitable for manufacturing, HVAC systems, and other commercial industrial equipment.
Explore a broad selection of high-quality, certified Infineon power semiconductors and components at EnvMart for your electronic component requirements.
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Frequently Asked Questions
The maximum continuous collector current for this IGBT transistor is 80 A.
The maximum collector emitter voltage rating is 650 V.
This model comes in a TO-247 package type, designed for through hole mounting.
It has a maximum power dissipation capability of 270 W.
The operating temperature range is from -40°C to 175°C.
The maximum gate emitter voltage is rated at ±30 V.
The maximum collector emitter saturation voltage (VceSAT) is 1.66 V.
It meets the AEC-Q101 automotive standard.
This IGBT belongs to the High Speed Fifth Generation series.
This model features a 3-pin configuration, but specific dimensions are not provided.
It is suitable for power electronics applications such as industrial motor drives, power supplies, inverters, and automotive electronics.
The country of origin for this IGBT is India.
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