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Infineon IGBT Single Transistor IC 4 A 600 V PG-SOT223 IKN04N60RC2ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IKN04N60RC2ATMA1 |
| Maximum Operating Temperature | 150°C |
| Package Type | PG-SOT223 |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | JEDEC47/20/22 |
| Maximum Continuous Collector Current Ic | 4A |
| Maximum Collector Emitter Voltage Vceo | 600V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.3V |
| Maximum Power Dissipation Pd | 6.8W |
| Maximum Gate Emitter Voltage VGEO | 20 V |
Key Features
- Maximum continuous collector current of 4 A.
- Collector-emitter voltage rated at 600 V.
- Maximum power dissipation of 6.8 W for efficient thermal management.
- Monolithically integrated diode for improved performance.
- Package type PG-SOT223 optimized for surface mounting.
- Maximum gate-emitter voltage of ±20 V.
- Low saturation voltage (VceSAT) of 2.3 V for superior switching efficiency.
- Operating temperature range from -40°C to 150°C ensures wide environmental tolerance.
Product Description
Infineon IKN04N60RC2ATMA1 IGBT Single Transistor IC is engineered for reliable switching in industrial and electronic power applications. Featuring a maximum continuous collector current of 4 A and a maximum collector-emitter voltage of 600 V, this device efficiently handles medium power levels with an effective power dissipation rating of 6.8 W. Its PG-SOT223 package supports compact surface-mounting in high-density circuits.
The transistor includes a monolithically integrated diode, enhancing performance with improved controllability and reliability compared to previous generations. Its maximum gate-emitter voltage rating of ±20 V and a low saturation voltage of 2.3 V ensure efficient switching characteristics, minimizing losses during operation.
The operating temperature range from -40°C to 150°C allows use in diverse environments, from industrial controls to automotive electronics. Compliance with JEDEC47/20/22 standards assures quality and consistency under industry norms.
This IGBT transistor is suitable for applications such as power management, motor drives, inverters, and industrial automation where efficient power switching is required. The package type PG-SOT223 supports easy PCB assembly and integration into designs with space constraints.
Maximum continuous collector current of 4 A. Maximum collector-emitter voltage of 600 V. Maximum power dissipation of 6.8 W. PG-SOT223 package for surface mounting. Maximum gate-emitter voltage of ±20 V. Low collector-emitter saturation voltage of 2.3 V.
Operating temperature range from -40°C to 150°C. Standards compliance JEDEC47/20/22. Monolithically integrated diode for enhanced performance. Designed for industrial, automotive, and electronic power applications. Explore related Infineon semiconductor products and IGBTs at EnvMart for advanced electronic components and solutions.
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Frequently Asked Questions
The maximum continuous collector current for this model is 4 A.
It has a maximum collector-emitter voltage rating of 600 V.
The maximum power dissipation for this IGBT is rated at 6.8 W.
This model utilizes a PG-SOT223 package type optimized for surface mounting.
The operating temperature range is from -40°C to 150°C.
The maximum gate-emitter voltage is rated at ±20 V.
It has a low collector-emitter saturation voltage (VceSAT) of 2.3 V.
This device complies with JEDEC47/20/22 standards.
It is suitable for applications such as power management, motor drives, inverters, and industrial automation.
The transistor includes a monolithically integrated diode, which enhances performance and controllability.
The PG-SOT223 package type supports easy PCB assembly and is designed for high-density circuit integration.
The country of origin for this IGBT is India.
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