Infineon N-Channel IGBT Single Transistor IC TO-247 650 V 85 A 227 W 3-Pin Through Hole IKW30N65EL5XKSA1

Infineon IKW30N65EL5XKSA1 is a high-performance N-Channel IGBT Single Transistor IC designed for use in demanding power semiconductor applications. Encapsulated in a TO-247 package with a 3-pin through hole configuration, this transistor is rated for a maximum continuous collector current of 85 A and a collector emitter voltage of 650 V. It offers a maximum power dissipation of 227 W, ensuring reliable operation in high-power environments.

This IGBT transistor operates efficiently over a broad temperature range from -40°C to 175°C, making it suitable for industrial and power electronics environments. Its low collector emitter saturation voltage of 1.5 V reduces conduction losses, improving overall system efficiency. The device features a low gate charge design, facilitating faster switching speeds with minimal gate drive losses.

Manufactured according to JEDEC standards, the IKW30N65EL5XKSA1 ensures premium quality and long-term reliability for applications requiring robust and stable power switching capabilities. The transistor's dimensions are 41.9 mm in length, 16.3 mm in width, and 5.3 mm in height, making it compatible with standard through hole mounts.

This product is ideal for use in industrial controls, power converters, motor drives, and other applications where high voltage and current switching is essential. Its package type TO-247 supports easy integration into existing assembly lines and systems.

High maximum continuous collector current of 85 A ensuring strong electrical load handling. Maximum collector emitter voltage rating of 650 V for high voltage applications. Power dissipation capacity of 227 W supports efficient thermal management.

3-pin TO-247 package with through hole mount type suitable for durable mounting. Wide operating temperature range from -40°C to 175°C ensures reliability in harsh environments. Low collector emitter saturation voltage of 1.5 V reduces conduction losses.

Low gate charge facilitates efficient and fast switching performance. Qualified to JEDEC standards assuring high manufacturing quality. Application suited for industrial, power electronics, motor drives, and related fields.

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