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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 3.4mm |
| Length | 3.4mm |
| Model | ISZ080N10NM6ATMA1 |
| Width | 1.1mm |
| Mount Type | Surface |
| Series | ISZ080N10 |
| Maximum Operating Temperature | 175°C |
| Package Type | TSDSON |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 75A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 8.04mΩ |
| Maximum Power Dissipation Pd | 100W |
| Typical Gate Charge Qg @ Vgs | 24nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Infineon ISZ080N10NM6ATMA1 industrial power N-Channel MOSFET is manufactured using advanced OptiMOS™ 6 thin wafer technology designed specifically for high switching frequency applications including telecom and server power supplies.
This device supports a maximum continuous drain current of 75 A and a maximum drain-source voltage of 100 V, providing reliable operation in demanding industrial environments. The 8-pin TSDSON package allows for compact, surface-mount installations, facilitating automated PCB assembly and space optimization.
Key device features include low conduction and switching losses, typical gate charge of 24 nC at 20 V gate drive, and a maximum power dissipation rating of 100 W. The MOSFET operates efficiently over a wide temperature range from -55°C to 175°C, suitable for challenging industrial and electronic system conditions.
Its low forward voltage of 1 V further aids in minimizing power loss. The device does not carry automotive standards but meets the requirements of many industrial applications.
This MOSFET is particularly well-suited for use in solar power systems, power tools, drone electronics, and telecom equipment where efficient power switching is critical. Its high avalanche energy rating and low reverse recovery charge enable robust, soft switching operation for enhanced system reliability.
Supports continuous drain current up to 75 amperes for demanding applications. 100 volts maximum drain-source voltage ensuring robust voltage tolerance. Employs thin wafer OptiMOS 6 technology for superior performance and efficiency.
Low conduction and switching losses enable high efficiency and reduced heat generation. Package type is compact 8-pin TSDSON surface mount suitable for automated assembly. Maximum power dissipation rated at 100 watts to support industrial operation.
Typical gate charge of 24 nC for fast switching capabilities. Operates reliably from -55°C up to 175°C for a wide temperature range. Forward voltage drop of 1 V supports efficient power conversion. Ideal for telecom, server power supplies, solar systems, power tools, and drones.
Explore more industrial MOSFETs and semiconductor products on EnvMart to find tailored solutions for your power management applications.
Explore more products in our Motor Controls & Power Semiconductors category.
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