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Infineon Industrial Power N-Channel MOSFET 75 A 100 V 8-Pin TSDSON ISZ080N10NM6ATMA1

Category Motor Controls & Power Semiconductors Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 3.4mm
Length 3.4mm
Model ISZ080N10NM6ATMA1
Width 1.1mm
Mount Type Surface
Series ISZ080N10
Maximum Operating Temperature 175°C
Package Type TSDSON
Minimum Operating Temperature -55°C
Pin Count 8
Channel Type Type N
Maximum Continuous Drain Current Id 75A
Maximum Drain Source Voltage Vds 100V
Maximum Drain Source Resistance Rds 8.04mΩ
Maximum Power Dissipation Pd 100W
Typical Gate Charge Qg @ Vgs 24nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1V

Key Features

  • Supports continuous drain current up to 75 amperes for demanding applications.
  • 100 volts maximum drain-source voltage ensuring robust voltage tolerance.
  • Employs thin wafer OptiMOS 6 technology for superior performance and efficiency.
  • Low conduction and switching losses enable high efficiency and reduced heat generation.
  • Package type is compact 8-pin TSDSON surface mount suitable for automated assembly.
  • Maximum power dissipation rated at 100 watts to support industrial operation.
  • Typical gate charge of 24 nC for fast switching capabilities.
  • Operates reliably from -55°C up to 175°C for a wide temperature range.

Product Description

Infineon ISZ080N10NM6ATMA1 industrial power N-Channel MOSFET is manufactured using advanced OptiMOS™ 6 thin wafer technology designed specifically for high switching frequency applications including telecom and server power supplies.

This device supports a maximum continuous drain current of 75 A and a maximum drain-source voltage of 100 V, providing reliable operation in demanding industrial environments. The 8-pin TSDSON package allows for compact, surface-mount installations, facilitating automated PCB assembly and space optimization.

Key device features include low conduction and switching losses, typical gate charge of 24 nC at 20 V gate drive, and a maximum power dissipation rating of 100 W. The MOSFET operates efficiently over a wide temperature range from -55°C to 175°C, suitable for challenging industrial and electronic system conditions.

Its low forward voltage of 1 V further aids in minimizing power loss. The device does not carry automotive standards but meets the requirements of many industrial applications.

This MOSFET is particularly well-suited for use in solar power systems, power tools, drone electronics, and telecom equipment where efficient power switching is critical. Its high avalanche energy rating and low reverse recovery charge enable robust, soft switching operation for enhanced system reliability.

Supports continuous drain current up to 75 amperes for demanding applications. 100 volts maximum drain-source voltage ensuring robust voltage tolerance. Employs thin wafer OptiMOS 6 technology for superior performance and efficiency.

Low conduction and switching losses enable high efficiency and reduced heat generation. Package type is compact 8-pin TSDSON surface mount suitable for automated assembly. Maximum power dissipation rated at 100 watts to support industrial operation.

Typical gate charge of 24 nC for fast switching capabilities. Operates reliably from -55°C up to 175°C for a wide temperature range. Forward voltage drop of 1 V supports efficient power conversion. Ideal for telecom, server power supplies, solar systems, power tools, and drones.

Explore more industrial MOSFETs and semiconductor products on EnvMart to find tailored solutions for your power management applications.

Explore more products in our Motor Controls & Power Semiconductors category.

Infineon Industrial Power N-Channel MOSFET 75 A 100 V 8-Pin TSDSON ISZ080N10NM6ATMA1
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Frequently Asked Questions

The maximum continuous drain current of this model is 75 A, making it suitable for demanding applications.

This MOSFET has a maximum drain-source voltage of 100 V, ensuring robust voltage tolerance.

The device comes in a compact 8-pin TSDSON surface mount package, suitable for automated assembly.

It operates reliably in a wide temperature range from -55°C to 175°C, suitable for various industrial conditions.

The typical gate charge for this model is 24 nC at a 20 V gate drive, allowing for fast switching capabilities.

The maximum power dissipation rated for this device is 100 W, supporting its operation in industrial applications.

The forward voltage drop is 1 V, which helps in minimizing power loss during operation.

The dimensions of this model are 3.4 mm in length, 3.4 mm in height, and 1.1 mm in width.

This device features an N-channel type, which is commonly used for various power applications.

It is particularly well-suited for applications in solar power systems, power tools, drone electronics, and telecom equipment.

The maximum gate-source voltage for this MOSFET is 20 V, which is important for its operation.

The maximum drain-source resistance is 8.04 mΩ, contributing to its efficiency in power management.

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