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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 5.21mm |
| Length | 42mm |
| Model | IHW20N135R5XKSA1 |
| Width | 16.13mm |
| Mount Type | Through Hole |
| Series | Resonant Switching |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | IEC61249-2-21, RoHS |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 40A |
| Maximum Collector Emitter Voltage Vceo | 1350V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.85V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 310W |
| Maximum Gate Emitter Voltage VGEO | ±25 V |
Infineon IHW20N135R5XKSA1 is a high-voltage N-Channel IGBT Single Transistor IC designed for demanding power switching operations. It supports a maximum continuous collector current of 40 amperes and operates at a maximum collector-emitter voltage of 1350 volts, making it suitable for robust industrial and commercial power conversion solutions.
The device is housed in a TO-247 through-hole package which facilitates secure soldered mounting and efficient heat dissipation through the package tab. Capable of dissipating up to 310 watts of power, the transistor can operate reliably over a wide temperature range of -40°C to 175°C, supporting applications under harsh thermal conditions.
Its low collector-emitter saturation voltage of 1.85 volts reduces conduction losses, improving energy efficiency in switching circuits. The gate-emitter voltage tolerance of ±25 volts allows for flexible, reliable gate driving without damaging the gate insulation.
This transistor is part of Infineon's Resonant Switching series and is well suited for use in resonant converters, industrial motor drive inverter stages, high-voltage switch mode power supplies, utility-grade power conversion modules, and high-power DC-DC converters.
Manufactured according to IEC61249-2-21 standards and compliant with RoHS directives, the device ensures environmental safety and material standards compliance. Supports 40A max continuous collector current. 1350V max collector-emitter voltage rating.
310W maximum power dissipation. TO-247 through-hole package. Operational temperature range from -40°C to 175°C. ±25V maximum gate-emitter voltage tolerance. Low saturation voltage of 1.85V. Resonant switching optimized device.
IEC61249-2-21 and RoHS compliant. Dimensions: 42mm length, 16.13mm width, 5.21mm height.
This Infineon IGBT transistor is ideal for industrial, commercial, and utility power electronics applications requiring reliable high-voltage switching and efficient thermal management. Explore our electronics semiconductor category for more Infineon IGBT transistors and related power components.
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