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Infineon N-Channel IGBT Single Transistor IC 40A 1350V 310W TO-247 Through Hole IHW20N135R5XKSA1

Category IGBT Single Transistor IC Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 5.21mm
Length 42mm
Model IHW20N135R5XKSA1
Width 16.13mm
Mount Type Through Hole
Series Resonant Switching
Maximum Operating Temperature 175°C
Package Type TO-247
Minimum Operating Temperature -40°C
Standards/Approvals IEC61249-2-21, RoHS
Pin Count 3
Maximum Continuous Collector Current Ic 40A
Maximum Collector Emitter Voltage Vceo 1350V
Maximum Collector Emitter Saturation Voltage VceSAT 1.85V
Channel Type N
Maximum Power Dissipation Pd 310W
Maximum Gate Emitter Voltage VGEO ±25 V

Key Features

  • Supports maximum continuous collector current of 40 amperes.
  • Rated for a maximum collector-emitter voltage of 1350 volts.
  • Power dissipation capacity up to 310 watts for high-power switching.
  • Packaged in a TO-247 case for through-hole solder mounting.
  • Wide operating temperature range from -40°C to 175°C.
  • Maximum gate-emitter voltage tolerance of ±25 volts ensures robust gate drive.
  • Low saturation voltage of 1.85 volts reduces conduction losses.
  • Designed for resonant switching applications in power conversion.

Product Description

Infineon IHW20N135R5XKSA1 is a high-voltage N-Channel IGBT Single Transistor IC designed for demanding power switching operations. It supports a maximum continuous collector current of 40 amperes and operates at a maximum collector-emitter voltage of 1350 volts, making it suitable for robust industrial and commercial power conversion solutions.

The device is housed in a TO-247 through-hole package which facilitates secure soldered mounting and efficient heat dissipation through the package tab. Capable of dissipating up to 310 watts of power, the transistor can operate reliably over a wide temperature range of -40°C to 175°C, supporting applications under harsh thermal conditions.

Its low collector-emitter saturation voltage of 1.85 volts reduces conduction losses, improving energy efficiency in switching circuits. The gate-emitter voltage tolerance of ±25 volts allows for flexible, reliable gate driving without damaging the gate insulation.

This transistor is part of Infineon's Resonant Switching series and is well suited for use in resonant converters, industrial motor drive inverter stages, high-voltage switch mode power supplies, utility-grade power conversion modules, and high-power DC-DC converters.

Manufactured according to IEC61249-2-21 standards and compliant with RoHS directives, the device ensures environmental safety and material standards compliance. Supports 40A max continuous collector current. 1350V max collector-emitter voltage rating.

310W maximum power dissipation. TO-247 through-hole package. Operational temperature range from -40°C to 175°C. ±25V maximum gate-emitter voltage tolerance. Low saturation voltage of 1.85V. Resonant switching optimized device.

IEC61249-2-21 and RoHS compliant. Dimensions: 42mm length, 16.13mm width, 5.21mm height.

This Infineon IGBT transistor is ideal for industrial, commercial, and utility power electronics applications requiring reliable high-voltage switching and efficient thermal management. Explore our electronics semiconductor category for more Infineon IGBT transistors and related power components.

Infineon N-Channel IGBT Single Transistor IC 40A 1350V 310W TO-247 Through Hole IHW20N135R5XKSA1
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Frequently Asked Questions

The maximum continuous collector current for this model is 40 amperes.

It has a maximum collector-emitter voltage rating of 1350 volts.

This transistor can dissipate up to 310 watts of power.

It can operate reliably over a wide temperature range from -40°C to 175°C.

It is packaged in a TO-247 through-hole package, which facilitates secure solder mounting.

The maximum gate-emitter voltage tolerance is ±25 volts.

The low collector-emitter saturation voltage is 1.85 volts, which helps reduce conduction losses.

This model is designed for resonant switching applications, including power conversion and industrial motor drive inverters.

The dimensions are 42mm in length, 16.13mm in width, and 5.21mm in height.

It is manufactured according to IEC61249-2-21 standards and is RoHS compliant.

This IGBT transistor has a pin count of 3.

It belongs to the Resonant Switching series, optimized for high-voltage applications.

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