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onsemi Bipolar Power Transistor PNP -40 A, -100 V, 160 W TO-218 3-Pin MJH6287G

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onsemi Bipolar Power Transistor PNP -40 A, -100 V, 160 W TO-218 3-Pin MJH6287G

Name: onsemi Bipolar Power Transistor PNP -40 A, -100 V, 160 W TO-218 3-Pin MJH6287G
Brand: onsemi
SKU: 400085
Price: 4.09 USD
Availability: InStock

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Category Bipolar Power Transistor Brand onsemi Condition New

Specifications

Country of Origin	China
Brand	onsemi
Height	33.15mm
Length	16.26mm
Model	MJH6287G
Width	5.3mm
Mount Type	Through Hole
Maximum Operating Temperature	150°C
Package Type	TO-218
Minimum Operating Temperature	-65°C
Pin Count	3
Maximum Collector Emitter Voltage Vceo	-100V
Minimum DC Current Gain hFE	100
Transistor Polarity	PNP
Maximum Emitter Base Voltage VEBO	5V
Maximum Collector Base Voltage VCBO	100V
Maximum Power Dissipation Pd	160W
Maximum DC Collector Current Idc	-40A
Transistor Configuration	Single
Maximum Transition Frequency ft	1MHz
100 C Performance Specified for	Reverse-Biased SOA with Inductive Load Switching Times with Inductive Loads Saturation Voltages Leakage Currents
onsemi MJH6287G Transistor, -40 A PNP, -100 V, 3-Pin TO-218Brand	onsemi

Key Features

Maximum DC collector current is -40 A suitable for demanding applications.
Collector emitter voltage rating is -100 V providing robust voltage tolerance.
Power dissipation maximum rating is 160 W enabling high power operation.
Constructed with a single transistor configuration and PNP polarity.
Designed for through hole mounting with a 3-pin TO-218 package.
Operating temperature range spans from -65°C minimum to 150°C maximum.
Minimum DC current gain (hFE) is 100 ensuring good amplification.
Features fast switching times with typical inductive fall, crossover, and storage times.

Product Description

onsemi MJH6287G Bipolar Power Transistor is a high performance Darlington transistor designed for general purpose amplification and low speed switching motor control applications. It supports a maximum collector current of -40 A and collector emitter voltage of -100 V, with a maximum power dissipation of 160 W, housed in a reliable TO-218 three-pin package suitable for through hole mounting.

The PNP transistor exhibits a minimum DC current gain (hFE) of 100 and operates across a wide temperature range from -65°C to 150°C, making it robust for industrial and automotive electronic systems.

It offers excellent switching performance with inductive fall time of 80 ns, inductive crossover time of 120 ns, and inductive storage time of 800 ns at 100°C. These features make it ideal for use in switching regulators, inverters, solenoids, relay drivers, and motor control circuits.

With dimensions of 5.3 mm width, 33.15 mm height, and 16.26 mm length, this component fits well in various PCB layouts requiring through hole components. The product is RoHS compliant and sourced from China.

The MJH6287G is suited for industrial, automotive, and electronics manufacturing applications where robust power control and amplification are required. Maximum DC collector current: -40 A. Maximum collector emitter voltage: -100 V.

Maximum power dissipation: 160 W. Transistor polarity: PNP. Package: TO-218 with 3 pins. Operating temperature range: -65°C to 150°C. Minimum current gain (hFE): 100. Fast switching times optimized for inductive loads. Dimensions: 5.3 mm width x 16.26 mm length x 33.15 mm height.

Compliant with RoHS standards. Discover more on semiconductor power transistors and onsemi components at EnvMart.