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Infineon OptiMOS 3 N-Channel MOSFET, 88 A, 200 V, Enhancement Mode, 3-Pin TO-220 IPP110N20N3GXKSA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 9.45mm
Length 10.36mm
Model IPP110N20N3GXKSA1
Width 4.57mm
Mount Type Through Hole
Series OptiMOS 3
Maximum Operating Temperature 175°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 88A
Maximum Drain Source Voltage Vds 200V
Maximum Drain Source Resistance Rds 11mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 300W
Typical Gate Charge Qg @ Vgs 65nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.2V

Key Features

  • Optimized for power efficiency using OptiMOS 3 technology.
  • Enhancement mode channel type for high switching performance.
  • Supports continuous drain current of up to 88 A.
  • Maximum drain-source voltage of 200 volts for robust operation.
  • Low drain-source resistance at 11 milliohms minimizes power loss.
  • Maximum power dissipation capability of 300 watts.
  • Operates safely within a temperature range from -55°C to 175°C.
  • Typical gate charge of 65 nC at 6.5 V gate-source voltage.

Product Description

Infineon IPP110N20N3GXKSA1 is a high-performance OptiMOS 3 N-Channel MOSFET designed for power electronics applications requiring efficient switching and high current handling capability. It supports a continuous drain current of 88 A and a maximum drain-source voltage of 200 V, making it suitable for robust industrial and automotive electronic systems.

This device is packaged in a 3-pin TO-220 form factor optimized for through-hole mounting, providing reliable mechanical and thermal stability. The enhancement mode channel type allows for improved switching performance, and the low maximum drain-source resistance of 11 milliohms reduces conduction losses.

The MOSFET is rated for maximum power dissipation of 300 W and can operate safely over a wide temperature range from -55°C minimum up to 175°C maximum, ensuring durability under demanding conditions.

With a typical gate charge of 65 nC at a gate-source voltage of 6.5 V, the MOSFET offers fast switching suitable for power supply designs, motor drives, and general-purpose switching. Its maximum gate-source voltage tolerance is ±20 V, further supporting robust gate control.

Compact package dimensions of 10.36 mm length, 9.45 mm height, and 4.57 mm width facilitate integration in constrained spaces. This device does not possess automotive certification but conforms to industrial performance standards.

Optimized power density and efficiency with OptiMOS 3 technology. Application in industrial power supplies, motor control, and consumer electronics. Robust performance at elevated temperatures for reliable operation. Reliable through-hole mounting with TO-220 package.

Low power loss due to minimal Rds(on).

Infineon OptiMOS 3 MOSFETs are widely used in industrial and commercial electronics for enhanced switching efficiency and power handling. This product is categorized under MOSFETs suitable for semiconductor discrete device applications.

Explore additional Infineon semiconductor devices and other MOSFET products in the EnvMart catalog to find optimal solutions for your power and switching needs.

Infineon OptiMOS 3 N-Channel MOSFET, 88 A, 200 V, Enhancement Mode, 3-Pin TO-220 IPP110N20N3GXKSA1
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Frequently Asked Questions

The maximum continuous drain current for the IPP110N20N3GXKSA1 is 88 A.

This model has a maximum drain-source voltage rating of 200 V.

The typical gate charge for this MOSFET at a gate-source voltage of 6.5 V is 65 nC.

The maximum power dissipation capability of the IPP110N20N3GXKSA1 is 300 W.

The dimensions of the TO-220 package are 10.36 mm in length, 9.45 mm in height, and 4.57 mm in width.

The maximum drain-source resistance (Rds) for this model is 11 milliohms.

It operates safely within a temperature range from -55°C to 175°C.

This MOSFET supports through-hole mounting due to its TO-220 package type.

The IPP110N20N3GXKSA1 features an N-channel type.

The maximum gate-source voltage tolerance for this model is ±20 V.

This model is suitable for applications in industrial power supplies, motor control, and consumer electronics.

The IPP110N20N3GXKSA1 belongs to the OptiMOS 3 series.

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