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Infineon HEXFET N-Channel MOSFET 180A 100V Enhancement 3-Pin TO-220 IRLB4030PBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 9.02mm |
| Length | 10.67mm |
| Model | IRLB4030PBF |
| Width | 4.83mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 180A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 4mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 370W |
| Typical Gate Charge Qg @ Vgs | 87nC |
| Maximum Gate Source Voltage Vgs | -16, +16V |
| Forward Voltage Vf | 1.3V |
Key Features
- Very low on-resistance of 4 milliohms reduces conduction losses.
- Supports maximum continuous drain current of 180 amperes for demanding power applications.
- Maximum drain-source voltage rating of 100 volts suitable for medium-voltage systems.
- Maximum power dissipation capability of 370 watts ensures sustained thermal reliability.
- Typical gate charge of 87 nanocoulombs enables efficient gate driving and switching behavior.
- Gate-source voltage withstands up to ±16 volts for robust control margin.
- Designed for through-hole mounting in TO-220 format aiding secure heat sink attachment.
- Wide operating temperature range from -55°C to 175°C supports harsh industrial environments.
Product Description
Infineon IRLB4030PBF is a HEXFET N-Channel MOSFET designed for high-current power switching applications. Rated for a continuous drain current of 180 A and a drain-source voltage up to 100 V, this enhancement mode transistor is housed in a 3-pin TO-220 through-hole package, allowing robust mounting and effective heat dissipation through a heat sink.
Featuring a very low on-resistance of 4 milliohms, the device minimizes conduction losses, enhancing efficiency in power conversion circuits. It can dissipate up to 370 W of power, supporting demanding thermal conditions up to 175°C with a minimum operating temperature of -55°C, making it suitable for industrial, automotive, and telecom applications.
The typical gate charge of 87 nC offers predictable switching behavior, and the gate-source voltage tolerance of ±16 V provides margin for reliable gate driving. This device is optimized for applications such as high-current motor drives, synchronous rectifiers in power supply units, DC-DC converters, battery management, industrial inverters, and telecom power distribution.
Being a through-hole mounted component enables secure attachment to heatsinks for thermal management. Its N-channel enhancement mode operation makes it ideal for low-side switching and synchronous topologies in power electronics.
Very low on-resistance 4mΩ for efficient conduction. 180 A continuous drain current for high-load use. Rated 100 V drain-source voltage. 370 W maximum power dissipation supports sustained operation. Low typical gate charge of 87 nC.
Gate-source voltage rating ±16 V ensures robust control. Wide thermal range from -55°C to 175°C. 3-pin TO-220 through-hole package with heatsink mounting. Applications include motor drives, power supplies, and industrial inverters.
Suitable for telecom power distribution racks and battery management. Explore more semiconductor solutions and power MOSFET components at EnvMart for your industrial, laboratory, and electronic design needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 180 amperes, making it suitable for high-load applications.
The maximum drain-source voltage rating is 100 volts, which is appropriate for medium-voltage systems.
It features a very low on-resistance of 4 milliohms, which helps reduce conduction losses.
This model can dissipate up to 370 watts, ensuring sustained thermal reliability under demanding conditions.
The typical gate charge is 87 nanocoulombs, which enables efficient gate driving and switching behavior.
It operates within a wide temperature range from -55°C to 175°C, suitable for harsh industrial environments.
The IRLB4030PBF is housed in a TO-220 package and is designed for through-hole mounting, allowing secure heat sink attachment.
The gate-source voltage withstands up to ±16 volts, providing a robust control margin.
This MOSFET is optimized for applications such as high-current motor drives, synchronous rectifiers, DC-DC converters, and battery management.
It is an N-channel enhancement mode MOSFET, ideal for low-side switching and synchronous topologies in power electronics.
The dimensions of the IRLB4030PBF are 10.67mm in length, 4.83mm in width, and 9.02mm in height.
The forward voltage for this model is 1.3 volts, which is relevant for its operation in circuits.
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