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Infineon N-Channel MOSFET, 212 A, 40 V, 8-Pin SuperSO8 5 x 6 BSZ017NE2LS5IATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | BSZ017NE2LS5IATMA1 |
| Mount Type | Surface |
| Series | BSZ |
| Maximum Operating Temperature | 175°C |
| Package Type | SuperSO8 5 x 6 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 212A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 0.7mΩ |
| Channel Mode | N |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Key Features
- Optimized for high performance with very low on-resistance for improved energy efficiency.
- Supports maximum power dissipation up to 81 W with high thermal tolerance.
- Includes monolithically integrated Schottky diode for enhanced switching performance.
- Qualified per JEDEC standards and 100% avalanche tested for reliability.
- Designed for surface mounting with compact 5 x 6 mm SuperSO8 package.
- Wide operating temperature range from -55°C to 175°C supporting industrial applications.
- Maximum gate source voltage of 20 V ensuring robust gate drive tolerance.
- Compliant with RoHS and halogen-free per IEC standards.
Product Description
Infineon BSZ017NE2LS5IATMA1 is an N-channel power MOSFET designed for high-efficiency power management applications. It features a maximum continuous drain current of 212 A and maximum drain source voltage of 40 V, packaged in a compact 8-pin SuperSO8 form factor measuring 5 x 6 mm. This device operates with high power dissipation capabilities up to 81 W, making it suitable for demanding industrial, automotive, and electronic equipment applications.
The MOSFET includes a monolithic integrated Schottky-like diode which improves switching efficiency and reduces losses. Its very low on-resistance (RDS(on)) of 0.7 mΩ at a gate-source voltage of 4.5 V supports high power density and enhanced energy efficiency in power regulators and buck converter circuits.
This component is JEDEC qualified, 100% avalanche tested, and meets rigorous reliability standards required in industrial and automotive sectors. It provides wide temperature tolerance from -55°C to 175°C enabling usage in harsh environments. The maximum gate-source voltage of ±20 V allows robust control and improves gate drive safety margins.
Compliance with RoHS and halogen-free IEC61249-2-21 standards reflects Infineon's commitment to environmental safety. The compact surface-mount package facilitates efficient PCB designs in servers, desktop power supplies, and voltage regulation modules.
Optimized for high performance buck converters. Monolithic integrated Schottky diode enhances switching speed and efficiency. Low on-resistance reduces power losses. JEDEC qualified with full avalanche testing. Wide operating temperature range for reliable operation in industrial environments.
RoHS and halogen-free compliant for environmental safety. Compact SuperSO8 5 x 6 mm package enables space-efficient PCB layouts. High maximum gate-source voltage ensures gate drive robustness. Suited for desktop, server, and high power density voltage regulator applications.
This Infineon MOSFET stands out for its impressive electric performance parameters and rugged industrial grade packaging, making it a versatile power device for multiple applications including power supplies, battery management systems, and automotive electronics.
Explore more MOSFETs and semiconductor components on EnvMart for your next industrial or electronic project.
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Frequently Asked Questions
The maximum continuous drain current for this model is 212 A.
It has a maximum drain-source voltage of 40 V.
The on-resistance (RDS(on)) is 0.7 mΩ at a gate-source voltage of 4.5 V.
This MOSFET is packaged in a SuperSO8 5 x 6 mm form factor.
It supports a maximum power dissipation of up to 81 W.
The operating temperature range is from -55°C to 175°C.
The maximum gate-source voltage is ±20 V.
It is designed for surface mounting.
It is compliant with RoHS and halogen-free per IEC61249-2-21 standards.
The typical gate charge (Qg) at Vgs is 80 nC.
It is suitable for high-efficiency power management applications, including power supplies and automotive electronics.
It includes a monolithically integrated Schottky diode that improves switching efficiency and reduces losses.
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