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Infineon N-Channel MOSFET 330 A 40 V 8-Pin SuperSO8 5 x 6 ISC037N03L5ISATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | ISC037N03L5ISATMA1 |
| Mount Type | Surface |
| Series | ISC |
| Maximum Operating Temperature | 175°C |
| Package Type | SuperSO8 5 x 6 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 330A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 1.4mΩ |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.1V |
Key Features
- Maximum continuous drain current of 330 A to handle high power loads.
- Maximum drain-source voltage rating of 40 V for reliable operation.
- Low drain-source resistance Rds(on) of 1.4 milliohm for improved efficiency.
- 8-pin SuperSO8 5 x 6 mm surface-mount package.
- Typical gate charge of 80 nC at Vgs for fast switching performance.
- Maximum power dissipation of 81 W suitable for demanding power circuits.
- Wide operating temperature range from -55°C to 175°C.
- Compliant with RoHS standards and qualified to AEC-Q101 automotive standard.
Product Description
Infineon ISC037N03L5ISATMA1 is a high-performance N-Channel MOSFET packaged in an 8-Pin SuperSO8 5 x 6 mm surface-mount form factor. It supports a maximum continuous drain current of 330 A and a maximum drain-source voltage of 40 V, making it ideal for power management and switching applications requiring high current handling and low conduction losses.
This device features a low on-resistance of 1.4 mΩ and a typical gate charge of 80 nC at gate-source voltage, enabling efficient and fast switching. It has a high maximum power dissipation of 81 W, suitable for demanding industrial, automotive, and consumer electronics applications.
The MOSFET is built using Infineon's OptiMOS technology, integrates a monolithic Schottky-like diode, and is optimized for high performance in buck converter circuits. It provides superior thermal resistance and reliability over a wide temperature range (-55°C to 175°C).
The device is RoHS compliant and meets the automotive reliability standard AEC-Q101, ensuring suitability for automotive electronics and harsh environment applications. The 8-pin SuperSO8 package facilitates compact PCB layouts and surface-mount assembly techniques.
High continuous drain current capacity of 330 A supports robust power delivery. Low Rds(on) resistance reduces power losses and improves efficiency. Wide operating temperature range accommodates demanding industrial conditions.
Automotive grade with AEC-Q101 certification for enhanced reliability. Pb-free, halogen-free construction compliant with environmental standards. Optimized for high-frequency switching in DC-DC converters and power supplies.
This MOSFET is widely applicable in industrial power control, automotive electronics, power supplies, motor drivers, and other high-performance switching systems. Its compact size and surface-mount form factor ease integration into complex electronic assemblies.
For more advanced power component solutions, explore the Electronics & Electricals category at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 330 A, allowing it to handle high power loads effectively.
This unit has a maximum drain-source voltage rating of 40 V, ensuring reliable operation in various applications.
The drain-source resistance Rds(on) for this model is 1.4 milliohm, which helps improve efficiency in power applications.
The typical gate charge at gate-source voltage (Vgs) for this device is 80 nC, enabling fast switching performance.
It has a maximum power dissipation of 81 W, making it suitable for demanding power circuits.
This model operates within a wide temperature range from -55°C to 175°C, accommodating various industrial conditions.
It is packaged in an 8-pin SuperSO8 5 x 6 mm surface-mount form factor, facilitating compact PCB layouts.
Yes, it is RoHS compliant and qualified to the AEC-Q101 automotive standard, ensuring suitability for automotive applications.
The forward voltage (Vf) for this unit is 1.1 V, relevant for its operation in various circuits.
This model is widely applicable in industrial power control, automotive electronics, power supplies, and motor drivers.
The maximum gate-source voltage (Vgs) for this MOSFET is 20 V, which is important for its operation.
This device features an N-channel configuration, which is commonly used for high-performance switching applications.
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