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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 9.4mm |
| Length | 10.1mm |
| Model | FQP17P06 |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Series | QFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 17A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 120mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 79W |
| Typical Gate Charge Qg @ Vgs | 21nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | -4V |
onsemi FQP17P06 is a QFET type P-Channel MOSFET designed for industrial and electronic power management applications. This enhancement-mode transistor allows maximum continuous drain current of 17 A with a maximum drain-source voltage of 60 V, making it suitable for medium power circuits.
It comes in a 3-pin TO-220 package designed for through-hole mounting, aiding easy integration into industrial assemblies.
The device offers a low drain source resistance of 120 milliohms and high power dissipation capability of 79 W, which reduces losses and improves efficiency in power switching applications.
Designed for robust use, the MOSFET supports a wide operating temperature range from -55°C to 175°C, meeting the demands of harsh environments. The typical gate charge is 21 nC at gate-source voltage, allowing faster switching with lower gate drive losses.
Compact dimensions of approximately 10.1 mm length, 4.7 mm width, and 9.4 mm height support space-constrained designs.
These features make the FQP17P06 ideal for industrial electronics including power supplies, power factor correction, DC-DC conversion, plasma display panels, and lighting ballast applications.
This device supports high current handling with enhanced switching characteristics. The TO-220 package ensures reliable mechanical and thermal performance. It is used in industrial, electronic, and commercial applications requiring efficient power transistors.
Robust operating temperature and voltage ratings make it suitable for rigorous environments. Compact size supports modern PCB designs with space limitations. Explore a wide range of MOSFET devices for enhanced electronic control and power management on EnvMart.
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