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Infineon CoolSiC N-Channel MOSFET 52A 1.2kV Enhancement Mode 3-Pin TO-247 AIMW120R035M1HXKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 5.3mm |
| Length | 16.3mm |
| Model | AIMW120R035M1HXKSA1 |
| Width | 21.5mm |
| Mount Type | Through Hole |
| Series | CoolSiC |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 52A |
| Maximum Drain Source Voltage Vds | 1.2kV |
| Maximum Drain Source Resistance Rds | 35mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 228W |
| Typical Gate Charge Qg @ Vgs | 59nC |
| Maximum Gate Source Voltage Vgs | 23V |
| Forward Voltage Vf | 5.2V |
Key Features
- Enhanced mode N-Channel MOSFET offers high efficiency and power density.
- Maximum continuous drain current of 52 amperes supports demanding applications.
- Drain-source voltage rating of 1.2 kV ensures robust high-voltage operation.
- Package type TO-247 allows through-hole mounting for reliable mechanical stability.
- Optimized for automotive onboard chargers and DC-DC converters in hybrid and electric vehicles.
- Maximum power dissipation rating of 228 watts supports efficient thermal management.
- Maximum gate-source voltage of 23 volts with typical gate charge of 59 nC for effective switching.
- Wide operating temperature range from -55°C to 175°C ensures durability in harsh environments.
Product Description
Infineon AIMW120R035M1HXKSA1 CoolSiC N-Channel MOSFET is a high-performance discrete semiconductor device designed for demanding power applications.
This 52 ampere, 1.2 kV enhancement mode MOSFET employs CoolSiC technology for superior efficiency, making it ideal for automotive onboard charger and DC-DC converter systems in hybrid and electric vehicles.
The device is housed in a robust 3-pin TO-247 package offering through-hole mounting capability, supporting reliable mechanical connection and heat dissipation.
Key electrical characteristics include a maximum drain-source resistance of 35 milliohms and a maximum power dissipation of 228 watts, enabling effective handling of high power loads with reduced losses.
Operating temperature ranges from -55°C to 175°C, suitable for harsh automotive environments. The device also meets the AEC-Q101 automotive standard ensuring compliance with stringent quality and reliability requirements.
Compact physical dimensions (21.5 mm width x 16.3 mm length x 5.3 mm height) facilitate integration into space-constrained circuit boards. Enhanced mode N-Channel MOSFET with CoolSiC technology for high efficiency. Continuous drain current up to 52 A for demanding automotive power applications.
High drain-source voltage rating of 1.2 kV supports high voltage circuits. Low on-resistance of 35 mΩ reduces conduction losses. Through-hole TO-247 package ensures robust mounting and excellent heat dissipation. Maximum power dissipation of 228W allows effective thermal management.
Wide temperature range performance from -55°C to 175°C. Typical gate charge of 59nC for fast switching with low losses. AEC-Q101 qualification for automotive quality assurance. Compact package dimensions for convenient PCB layout.
This Infineon MOSFET is well-suited for industrial, automotive, electric vehicle, and power management applications requiring high reliability and efficiency. Explore more Infineon semiconductor components in the EnvMart catalogue to find complementary power electronics solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 52 amperes, making it suitable for demanding applications.
It has a drain-source voltage rating of 1.2 kV, which ensures robust high-voltage operation.
The maximum power dissipation rating is 228 watts, allowing for effective thermal management in high power applications.
This model is housed in a TO-247 package type, which allows for through-hole mounting and provides mechanical stability.
The operating temperature range is from -55°C to 175°C, making it suitable for harsh environments.
The typical gate charge is 59 nC, which facilitates effective switching with low losses.
The dimensions are 21.5 mm in width, 16.3 mm in length, and 5.3 mm in height.
It complies with the AEC-Q101 automotive standard, ensuring quality and reliability for automotive applications.
The maximum gate-source voltage is 23 volts, which is essential for proper operation of the MOSFET.
This model features an N-channel configuration, which is typical for enhancement mode MOSFETs.
The maximum drain-source resistance is 35 milliohms, which helps reduce conduction losses during operation.
It is optimized for automotive onboard chargers and DC-DC converters in hybrid and electric vehicles.
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