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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 8.77mm |
| Length | 10.54mm |
| Model | IRF3415PBF |
| Width | 4.69mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 43A |
| Maximum Drain Source Voltage Vds | 150V |
| Maximum Drain Source Resistance Rds | 42mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 200W |
| Typical Gate Charge Qg @ Vgs | 200nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
| N-channel MOSFET,IRF3415 43A 150VBrand | International Rectifier |
Infineon IRF3415PBF is a HEXFET® N-Channel MOSFET designed to meet demanding industrial and power management applications. It offers a maximum continuous drain current of 43 A and voltage rating of 150 V, making it ideal for efficient power switching and control.
The device comes in a compact 3-pin TO-220 through-hole package ensuring easy integration into various circuit designs. Its enhancement mode channel provides reliable and efficient switching characteristics.
With a maximum power dissipation rating of 200 W and an operating temperature range between -55°C and 175°C, the IRF3415PBF is capable of operating in harsh industrial and commercial environments.
The MOSFET features a low typical gate charge of 200 nC, which facilitates rapid switching necessary for power electronics and motor control systems. Its low drain-source resistance of 42 milliohms reduces conduction losses, improving overall energy efficiency.
Additionally, the device supports gate voltages up to ±20 V, protecting the gate oxide from damage and increasing device longevity. The TO-220 package offers adequate thermal performance and easy mounting options suitable for industrial power supplies, motor drivers, and power converters.
The device uses HEXFET technology providing low conduction losses. Three-pin TO-220 package suitable for through-hole mounting. Enhancement mode N-Channel operation ensures reliable switching performance. Maximum power dissipation of 200 W enables high power handling capability.
Robust operating temperature range from -55°C to 175°C supports harsh environments. Typical gate charge of 200 nC allows fast switching speeds. Maximum drain-source resistance of 42 mΩ reduces power loss. Maximum gate-source voltage rating of ±20 V provides durable gate protection.
This Infineon HEXFET N-Channel MOSFET is widely used in industrial automation, power supply regulation, motor control in HVAC systems, and various commercial power electronics applications where efficiency and reliability are critical.
Explore our full range of discrete semiconductors and MOSFETs on EnvMart for optimized performance solutions.
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