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Infineon HEXFET N-Channel MOSFET 43 A 150 V Enhancement 3-Pin TO-220 IRF3415PBF

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 8.77mm
Length 10.54mm
Model IRF3415PBF
Width 4.69mm
Mount Type Through Hole
Series HEXFET
Maximum Operating Temperature 175°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 43A
Maximum Drain Source Voltage Vds 150V
Maximum Drain Source Resistance Rds 42mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 200W
Typical Gate Charge Qg @ Vgs 200nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.3V
N-channel MOSFET,IRF3415 43A 150VBrand International Rectifier

Key Features

  • The device uses HEXFET technology providing low conduction losses.
  • Three-pin TO-220 package suitable for through-hole mounting.
  • Enhancement mode N-Channel operation ensures reliable switching performance.
  • Maximum power dissipation of 200 W enables high power handling capability.
  • Robust operating temperature range from -55°C to 175°C supports harsh environments.
  • Typical gate charge of 200 nC allows fast switching speeds.
  • Maximum drain-source resistance of 42 mΩ reduces power loss.
  • Maximum gate-source voltage rating of ±20 V provides durable gate protection.

Product Description

Infineon IRF3415PBF is a HEXFET® N-Channel MOSFET designed to meet demanding industrial and power management applications. It offers a maximum continuous drain current of 43 A and voltage rating of 150 V, making it ideal for efficient power switching and control.

The device comes in a compact 3-pin TO-220 through-hole package ensuring easy integration into various circuit designs. Its enhancement mode channel provides reliable and efficient switching characteristics.

With a maximum power dissipation rating of 200 W and an operating temperature range between -55°C and 175°C, the IRF3415PBF is capable of operating in harsh industrial and commercial environments.

The MOSFET features a low typical gate charge of 200 nC, which facilitates rapid switching necessary for power electronics and motor control systems. Its low drain-source resistance of 42 milliohms reduces conduction losses, improving overall energy efficiency.

Additionally, the device supports gate voltages up to ±20 V, protecting the gate oxide from damage and increasing device longevity. The TO-220 package offers adequate thermal performance and easy mounting options suitable for industrial power supplies, motor drivers, and power converters.

The device uses HEXFET technology providing low conduction losses. Three-pin TO-220 package suitable for through-hole mounting. Enhancement mode N-Channel operation ensures reliable switching performance. Maximum power dissipation of 200 W enables high power handling capability.

Robust operating temperature range from -55°C to 175°C supports harsh environments. Typical gate charge of 200 nC allows fast switching speeds. Maximum drain-source resistance of 42 mΩ reduces power loss. Maximum gate-source voltage rating of ±20 V provides durable gate protection.

This Infineon HEXFET N-Channel MOSFET is widely used in industrial automation, power supply regulation, motor control in HVAC systems, and various commercial power electronics applications where efficiency and reliability are critical.

Explore our full range of discrete semiconductors and MOSFETs on EnvMart for optimized performance solutions.

Infineon HEXFET N-Channel MOSFET 43 A 150 V Enhancement 3-Pin TO-220 IRF3415PBF
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Frequently Asked Questions

The maximum continuous drain current of the Infineon IRF3415PBF is 43 A.

This model has a maximum voltage rating of 150 V.

The maximum power dissipation for the IRF3415PBF is rated at 200 W.

The typical gate charge is 200 nC, facilitating fast switching speeds.

The maximum drain-source resistance is 42 mΩ, which helps reduce power loss.

It operates within a temperature range of -55°C to 175°C, suitable for harsh environments.

This model comes in a 3-pin TO-220 package, suitable for through-hole mounting.

The maximum gate-source voltage rating is ±20 V, providing durable gate protection.

The dimensions are 10.54 mm in length, 4.69 mm in width, and 8.77 mm in height.

This model uses an N-channel configuration, operating in enhancement mode.

It is widely used in industrial automation, power supply regulation, and motor control in HVAC systems.

The forward voltage for the IRF3415PBF is 1.3 V.

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