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onsemi QFET Type P-Channel MOSFET 27 A 60 V Enhancement 3-Pin TO-220 FQP27P06
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 9.4mm |
| Length | 10.1mm |
| Model | FQP27P06 |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Series | QFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 27A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 70mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 120W |
| Typical Gate Charge Qg @ Vgs | 33nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | -4V |
Key Features
- Features enhancement mode operation for improved control.
- Has a maximum drain source resistance of 70 milliohms for efficient conduction.
- Capable of dissipating up to 120 watts of power.
- Operates safely within a temperature range from -55°C to 175°C.
- Utilizes QFET planar technology for reduced switching losses.
- Includes a typical gate charge of 33 nanocoulombs at Vgs=3V.
- Designed with a maximum gate source voltage of ±25 V.
- Compact dimensions of 10.1 mm length, 9.4 mm height, and 4.7 mm width.
Product Description
onsemi FQP27P06 P-Channel MOSFET is a high-performance transistor built using advanced QFET planar technology. Rated for a maximum continuous drain current of 27 A and drain source voltage up to 60 V, this device is housed in a 3-pin TO-220 package suitable for through-hole mounting.
The enhancement channel mode MOSFET features low on-resistance of 70 mΩ to minimize conduction losses and a power dissipation capacity of 120 W, supporting efficient thermal management during demanding operations. It operates reliably across a wide temperature range from -55°C up to 175°C, making it suitable for industrial and commercial environments.
The device offers a typical gate charge of 33 nC contributing to reduced switching losses, which is advantageous for applications that involve rapid switching such as power factor correction and DC-DC converters. The gate source voltage tolerance of -25 V to +25 V ensures robust gate control.
Physical dimensions are compact with length 10.1 mm, height 9.4 mm, and width 4.7 mm, allowing flexible integration in electronic assemblies.
This MOSFET is ideal for various industrial, laboratory, and commercial applications including power supplies, lighting ballasts, plasma display panels, and motion control systems. Its robust construction and advanced technology ensure reliability and efficiency in demanding semiconductor environments.
Features enhancement mode operation for improved control. Has a maximum drain source resistance of 70 milliohms for efficient conduction. Capable of dissipating up to 120 watts of power. Operates safely within a temperature range from -55°C to 175°C.
Utilizes QFET planar technology for reduced switching losses. Includes a typical gate charge of 33 nanocoulombs at Vgs=3V. Designed with a maximum gate source voltage of ±25 V. Compact dimensions of 10.1 mm length, 9.4 mm height, and 4.7 mm width.
Mounting through-hole for reliable installation. Ideal for power supplies, DC-DC converters, lighting ballasts, and motion control applications. Explore more products and detailed specifications in the Semiconductor category on EnvMart for your industrial and technical needs.
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Frequently Asked Questions
The maximum continuous drain current for the FQP27P06 is 27 A.
This model can handle a maximum drain-source voltage of 60 V.
It is capable of dissipating up to 120 watts of power.
The typical gate charge at Vgs=3V is 33 nanocoulombs.
The dimensions are 10.1 mm in length, 9.4 mm in height, and 4.7 mm in width.
The maximum gate-source voltage is ±25 V.
It operates safely within a temperature range from -55°C to 175°C.
This model uses through-hole mounting.
The maximum drain-source resistance is 70 milliohms.
This MOSFET utilizes a P-channel type.
It utilizes QFET planar technology for reduced switching losses.
It is suitable for applications such as power supplies, lighting ballasts, and motion control systems.
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