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DiodesZetex Quad Transistor H-Bridge Bipolar NPN + PNP 2 A 40 V 8-Pin Surface Mount ZHB6790TA

Category Bipolar Transistors Brand DiodesZetex Condition New

Specifications

Country of Origin Germany
Brand DiodesZetex
Height 1.7mm
Length 6.7mm
Model ZHB6790TA
Width 7.3mm
Mount Type Surface
Series ZHB67
Maximum Operating Temperature 150°C
Package Type Surface Mount
Minimum Operating Temperature -55°C
Pin Count 8
Maximum Collector Emitter Voltage Vceo 40V
Minimum DC Current Gain hFE 150
Transistor Polarity NPN + PNP
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 50V
Maximum Power Dissipation Pd 2W
Maximum DC Collector Current Idc 2A
Transistor Configuration Full Bridge
Maximum Transition Frequency ft 150MHz

Key Features

  • This transistor features NPN + PNP polarity suitable for full bridge configurations.
  • It comes in an 8-pin surface mount package measuring 6.7 mm length, 7.3 mm width, and 1.7 mm height.
  • Operates reliably over a wide temperature range from -55°C up to 150°C.
  • Maximum power dissipation is rated at 2 W with a transition frequency up to 150 MHz.
  • Maximum collector base voltage is 50 V and emitter base voltage is 5 V.
  • Minimum DC current gain (hFE) is 150 ensuring efficient switching performance.
  • Made in Germany, this component is designed for demanding industrial and electronic applications.

Product Description

The DiodesZetex ZHB6790TA is a high-performance quad transistor H-bridge component combining NPN and PNP bipolar transistors in a compact 8-pin surface mount package. It is designed for use in industrial, electronic, power control, and signal processing applications requiring reliable switching and amplification.

This transistor supports a maximum DC collector current of 2 amperes and a maximum collector-emitter voltage of 40 volts, making it suitable for medium power circuits. Its maximum power dissipation of 2 watts and transition frequency of 150 MHz enable effective operation in both switching and analog circuits.

The device's robust thermal range from -55°C to 150°C allows application in harsh environments including automotive and industrial control systems. The 8-pin surface mount package offers compactness with dimensions of 6.7 mm length, 7.3 mm width, and 1.7 mm height, facilitating efficient PCB layouts.

Key electrical parameters include a maximum collector-base voltage of 50 V, emitter-base voltage of 5 V, and a minimum DC current gain (hFE) of 150, affirming its strong gain characteristics. This transistor H-bridge configuration facilitates full bridge switching circuits commonly used in motor drivers and power conversion modules.

This transistor features NPN + PNP polarity suitable for full bridge configurations. It comes in an 8-pin surface mount package measuring 6.7 mm length, 7.3 mm width, and 1.7 mm height. Operates reliably over a wide temperature range from -55°C up to 150°C.

Maximum power dissipation is rated at 2 W with a transition frequency up to 150 MHz. Maximum collector base voltage is 50 V and emitter base voltage is 5 V. Minimum DC current gain (hFE) is 150 ensuring efficient switching performance.

Made in Germany, this component is designed for demanding industrial and electronic applications.

This DiodesZetex transistor is ideal for use in power electronics, signal amplification, automotive electronics, industrial controls, and other electronic designs requiring reliable bipolar transistor functionality. Its surface mount design supports automated assembly and high-density PCB implementations.

Explore the wide range of Bipolar Transistors available on EnvMart for industrial and commercial electronic manufacturing solutions.

DiodesZetex Quad Transistor H-Bridge Bipolar NPN + PNP 2 A 40 V 8-Pin Surface Mount ZHB6790TA
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Frequently Asked Questions

The maximum collector-emitter voltage (Vceo) for this transistor is 40 V.

This model has a maximum power dissipation rating of 2 W.

The minimum DC current gain (hFE) is 150, which ensures efficient switching performance.

The surface mount package measures 6.7 mm in length, 7.3 mm in width, and 1.7 mm in height.

The maximum collector-base voltage (VCBO) is 50 V.

It operates reliably over a wide temperature range from -55°C to 150°C.

The maximum transition frequency for this transistor is 150 MHz.

This model features a full bridge transistor configuration suitable for various applications.

It features both NPN and PNP polarity, making it suitable for full bridge configurations.

The maximum DC collector current (Idc) for this transistor is 2 A.

This component is manufactured in Germany.

It is designed for use in industrial, electronic, power control, and signal processing applications.

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