IXYS N-Channel IGBT 75 A 1700 V 350 W TO-247AD Through Hole IXGH32N170

IXYS IXGH32N170 is a high voltage N-Channel Insulated Gate Bipolar Transistor (IGBT) with a continuous collector current rating of 75 A and a collector-emitter voltage capability of 1700 V, housed in a robust TO-247AD package with through-hole mounting.

This IGBT device offers a maximum power dissipation of 350 W, allowing for efficient operation in power electronics applications. It combines the advantages of an isolated gate field-effect transistor for easy gate drive with the high current capability and low saturation voltage of bipolar transistors.

The device has a fast switching speed of 250 ns, making it suitable for switching power supplies, motor control, and industrial automation. Its gate-emitter voltage tolerance of ±20 V enables precise control and protection against voltage spikes.

Operating temperature ranges from -55°C to 150°C, ensuring reliable performance under harsh environmental conditions. The saturation voltage at full load is 3.3 V, enhancing overall efficiency and reducing losses in power circuits.

Compliant with UL 94 V-0 flame retardant standards, the IXGH32N170 offers enhanced safety and durability in industrial, HVAC, manufacturing, and power conversion applications. Its 3-pin configuration and N-channel type make it versatile for various power switching designs.

The device features a maximum continuous collector current of 75 amperes. It supports a maximum collector-emitter voltage of 1700 volts. Designed with a maximum power dissipation of 350 watts for efficient heat handling.

The package type is TO-247AD with through-hole mount for secure installation. It has a fast switching speed with a maximum of 250 nanoseconds. Maximum gate-emitter voltage tolerance is ±20 volts. Operating temperature ranges from -55°C to 150°C.

The saturation voltage at maximum collector-emitter current is 3.3 volts. UL 94 V-0 flame retardant standard compliance ensures safety in industrial environments. This IGBT device features 3 pins and an N-channel channel type.

IXYS semiconductor components like the IXGH32N170 are widely used across electronic manufacturing, industrial power control, and renewable energy systems, where high efficiency and fast switching are required. Engineers and designers rely on these discrete IGBTs for robust, high-performance power conversion solutions.

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