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STMicroelectronics N-Channel IGBT 80A 650V 3-Pin TO-247 Through Hole STGW40H65DFB
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 20.15mm |
| Model | STGW40H65DFB |
| Mount Type | Through Hole |
| Series | H |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | Lead (Pb) Free package, ECOPACK |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 80A |
| Maximum Collector Emitter Voltage Vceo | 650V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.3V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 283W |
| Maximum Gate Emitter Voltage VGEO | ±20 V |
Key Features
- The IGBT provides high efficiency and fast switching for power control applications.
- Maximum continuous collector current of 80 amperes ensures robust performance.
- Collector-emitter voltage rating of 650 volts supports high voltage loads.
- Power dissipation up to 283 watts allows for heavy-duty operation.
- Three-pin TO-247 packaging supports easy through-hole mounting on circuit boards.
- Gate-emitter voltage rating is ±20 volts for safe and reliable driving.
- Collector-emitter saturation voltage is 2.3 volts for low conduction losses.
- Operating temperature range from -55°C to 175°C supports harsh environmental conditions.
Product Description
STMicroelectronics STGW40H65DFB is a high-performance N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for efficient and fast power switching applications in industrial and electronic systems.
This device offers a maximum continuous collector current of 80 A and collector-emitter voltage up to 650 V, making it suitable for high power applications including motor drives, power inverters, and industrial controls.
The transistor is housed in a 3-pin TO-247 package intended for through-hole mounting, facilitating easy integration into various power electronic boards. The device supports a maximum power dissipation of 283 W, enabling it to handle demanding thermal loads efficiently.
The maximum gate-emitter voltage of ±20 V ensures secure driving without device damage, and the collector-emitter saturation voltage of 2.3 V reduces conduction losses and enhances energy efficiency.
With an operating temperature range from -55°C up to 175°C, this IGBT reliably performs in both low and high temperature environments, suitable for automotive and industrial sectors.
Environmentally conscious designs benefit from the Lead (Pb) Free ECOPACK package, meeting RoHS compliance and reducing hazardous substances. The IGBT combines MOSFET gate characteristics with bipolar transistor current capability.
The TO-247 package supports effective heat dissipation for high power operation. Ensures reliable performance in power switch circuits for manufacturing, HVAC, and motor control. Suitable for discrete semiconductor use in power electronics and industrial automation.
Complies with standard environmental and safety regulations for electronics components. This product is an ideal choice for electronic engineers and system integrators seeking a robust power transistor solution with high current and voltage ratings.
Explore our extensive category of IGBTs for power semiconductor needs and trusted STMicroelectronics products at EnvMart.
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Frequently Asked Questions
The maximum continuous collector current of this IGBT is 80 amperes.
The collector-emitter voltage rating is 650 volts, allowing it to support high voltage loads.
This model supports a maximum power dissipation of 283 watts, enabling heavy-duty operation.
The operating temperature range is from -55°C to 175°C, making it suitable for harsh environmental conditions.
It is housed in a 3-pin TO-247 package, which supports through-hole mounting on circuit boards.
The maximum gate-emitter voltage rating is ±20 volts, ensuring safe and reliable driving of the IGBT.
The collector-emitter saturation voltage is 2.3 volts, which helps reduce conduction losses.
This IGBT features a Lead (Pb) Free ECOPACK package and complies with RoHS regulations, reducing hazardous substances.
The height of this IGBT is 20.15 mm, which is relevant for mounting and integration into circuits.
It is suitable for high power applications including motor drives, power inverters, and industrial controls.
This IGBT has an N-channel type, which combines MOSFET gate characteristics with bipolar transistor current capability.
The country of origin for this IGBT is India.
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