STMicroelectronics N-Channel IGBT 30 A 1200 V, 3-Pin TO-247 Through Hole STGW30NC120HD

STMicroelectronics STGW30NC120HD N-Channel Insulated Gate Bipolar Transistor (IGBT) is a high-efficiency power semiconductor device combining MOSFET-like gate drive characteristics with bipolar transistor current capacity and low saturation voltage. This device is packaged in a 3-pin TO-247 form factor with through-hole mounting, suitable for high power electronic control applications.

Featuring a maximum continuous collector current of 30 amperes and a collector-emitter voltage rating of 1200 volts, this IGBT device ensures reliable operation in demanding industrial environments. The maximum power dissipation rating of 220 watts enables sustained high-load performance with adequate heat management.

The STGW30NC120HD operates effectively over an extended temperature range from -55°C to 150°C, making it suitable for a wide scope of applications including motor control, inverters, and switching power supplies. The device's gate emitter voltage tolerance of ±25 volts offers robust gate control with reduced risk of damage.

The collector-emitter saturation voltage of 2.75 volts contributes to energy efficiency by reducing conduction losses during switching. Its dimensions - 14.8 mm length, 15.75 mm width, and 20.15 mm height - allow compact and convenient installation in varied PCB layouts. Compliance with ECOPACK and JEDEC JESD97 standards assures adherence to industry quality and environmental regulations.

This IGBT is ideally suited for industrial, commercial, and laboratory electronics where high-speed switching and high current management are demanded. The through-hole TO-247 package supports mechanical stability and effective thermal management with appropriate heat sinking. STMicroelectronics’ reliable semiconductor devices provide excellent performance and longevity in high power applications.

The IGBT offers a maximum power dissipation of 220 watts ensuring robust performance in power control circuits. It features fast switching speed up to 1 MHz suitable for industrial and commercial electronics. Designed for reliable operation between -55°C and 150°C operating temperature range.

The device has a maximum gate-emitter voltage tolerance of ±25 V providing enhanced gate control stability. Its collector-emitter saturation voltage is 2.75 V enabling efficient conductive state operation. The package dimensions measure 14.8 mm length, 15.75 mm width, and 20.15 mm height for compact assembly.

Standards compliance includes ECOPACK and JEDEC JESD97 ensuring quality and environmental safety. The IGBT is suitable for industrial power control, motor drives, and high-efficiency switching applications. Through-hole mounting facilitates easy integration into PCB designs requiring robust mechanical support.

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