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ROHM IGBT Power Transistor 20 A 650 V 3-Pin TO-247GE Through Hole RGTH40TS65GC13
Specifications
| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Model | RGTH40TS65GC13 |
| Mount Type | Through Hole |
| Series | RGTH40TS65GC13 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247GE |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 20A |
| Maximum Collector Emitter Voltage Vceo | 650V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.6V |
| Maximum Power Dissipation Pd | 144W |
| Maximum Gate Emitter Voltage VGEO | ±30 V |
Key Features
- Maximum continuous collector current of 20 A ensures robust performance.
- High maximum collector emitter voltage of 650 V supports demanding electronic circuits.
- Low maximum collector emitter saturation voltage of 1.6 V reduces power loss.
- TO-247GE package with 3-pin configuration for easy through-hole mounting.
- Operates efficiently within temperature range of -40°C to 175°C.
- Maximum power dissipation up to 144 W supports high power applications.
- Compliant with RoHS standards ensuring environmental safety.
- High gate emitter voltage tolerance of ±30 V allows flexibility in gate drive.
Product Description
The ROHM RGTH40TS65GC13 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for robust power management in industrial electronic applications. With a maximum continuous collector current rating of 20 A and a collector emitter voltage of 650 V, this device efficiently handles demanding power switching tasks.
Housed in a TO-247GE 3-pin package for convenient through-hole mounting, the device supports easy integration into existing circuit designs. It is engineered to operate reliably across a wide temperature range from -40°C to 175°C, making it well suited for harsh industrial environments.
This IGBT features a low saturation voltage of 1.6 V which minimizes conduction losses and enhances overall device efficiency. The maximum power dissipation rating of 144 W further ensures it can manage high power conditions without thermal failure.
ROHM's field-stop trench technology incorporated in this model enables high-speed switching with reduced switching losses and soft switching capability, enhancing performance in power inverter and motor control applications.
The transistor also complies with RoHS directives, employing lead-free plating to meet environmental safety standards. Maximum continuous collector current of 20 A ensures robust performance. High maximum collector emitter voltage of 650 V supports demanding electronic circuits.
Low maximum collector emitter saturation voltage minimizes power loss. TO-247GE package with through-hole mount type enables ease of assembly. Operates effectively between -40°C and 175°C for diverse applications. High power dissipation capability of 144 W for industrial use.
RoHS compliant with lead-free plating for environmental safety. Field-stop trench IGBT design for enhanced switching efficiency. Supports ±30 V gate emitter voltage for gate drive flexibility. Suitable for industrial, laboratory, and power electronics systems.
Ideal for manufacturers and engineers working in power electronics, motor drives, automation, and renewable energy sectors seeking reliable, high-speed switching devices. This component enables efficient energy conversion and management in various electronic systems.
Explore more semiconductor solutions and power transistor options in the ROHM series on EnvMart for your industrial and laboratory projects.
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Frequently Asked Questions
The maximum continuous collector current for this model is 20 A.
It can handle a maximum collector emitter voltage of 650 V.
The maximum power dissipation rating is 144 W.
This IGBT operates efficiently within a temperature range of -40°C to 175°C.
The transistor is housed in a TO-247GE package type.
The maximum collector emitter saturation voltage is 1.6 V.
It has a gate emitter voltage tolerance of ±30 V.
This model has a 3-pin configuration.
Yes, it is compliant with RoHS standards, ensuring environmental safety.
It supports through-hole mounting.
This IGBT is suitable for industrial, laboratory, and power electronics systems, including power management and motor control applications.
The country of origin for this model is India.
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