ROHM IGBT 40A 650V 3-Pin Through Hole TO-247GE RGTH80TS65GC13

ROHM RGTH80TS65GC13 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for industrial and electronic component applications. This 3-pin IGBT comes in a robust TO-247GE package with through-hole mount style, offering durability and easy integration into power control circuits.

Rated for a maximum continuous collector current of 40 A and a maximum collector emitter voltage of 650 V, the RGTH80TS65GC13 provides excellent power handling capabilities for demanding applications. It features a maximum power dissipation of 234 W, allowing efficient heat dissipation in power electronics.

The device supports operation within a wide temperature range from -40°C to 175°C ensuring reliable performance in harsh environmental conditions. The maximum gate emitter voltage rating of ±30 V enables precise and safe switching control.

ROHM's Field Stop Trench IGBT technology affords low collector emitter saturation voltage of 1.6 V, resulting in lower conduction losses and improved efficiency. This feature, along with high-speed switching and low switching loss, makes it ideal for power conversion and motor drive applications.

The RGTH80TS65GC13 is Pb-free and RoHS compliant, meeting environmental standards and regulations. This IGBT supports soft switching, which reduces electromagnetic interference in electronic circuits. The device is designed to support applications in industrial automation, HVAC systems, power supplies, and electric vehicles where robust and efficient power control is critical.

Its 3-pin configuration and through-hole mounting make it suitable for prototyping and production-level assemblies.

In summary, the ROHM RGTH80TS65GC13 IGBT combines power, efficiency, and reliability for demanding industrial and electronic component applications. Browse more semiconductor and IGBT products at EnvMart to find complementary power management components.