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ROHM IGBT Semiconductor 50 A Maximum Continuous Collector Current 650 V Maximum Collector Emitter Voltage 245 RGWS00TS65GC13
Specifications
| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Model | RGWS00TS65GC13 |
| Mount Type | Through Hole |
| Series | RGWS00TS65GC13 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247GE |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 50A |
| Maximum Collector Emitter Voltage Vceo | 650V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.6V |
| Maximum Power Dissipation Pd | 245W |
| Maximum Gate Emitter Voltage VGEO | ±30 V |
Key Features
- The device features a 3-pin TO-247GE package suitable for through-hole mounting.
- It supports a maximum gate emitter voltage of ±30 V, ensuring flexible gate drive requirements.
- The maximum collector emitter saturation voltage is 1.6 V, providing low voltage drop in operation.
- Operating temperature ranges from -40°C minimum to 175°C maximum, suitable for harsh conditions.
- ROHS compliant with Pb-free lead plating for environmental safety.
- Designed with Fast Switching and Low Switching Loss enabling high efficiency applications.
- Ideal for industrial power management and motor control circuits.
- Package style ensures ease of integration on PCB with through hole type mounting.
Product Description
The ROHM RGWS00TS65GC13 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for power semiconductor applications. It delivers a continuous collector current of 50 A and withstands a maximum collector emitter voltage of 650 V, making it suitable for a wide range of power switching and control circuits.
Its 3-pin TO-247GE package with through-hole mounting supports robust mechanical and electrical connections and allows for efficient heat dissipation in industrial and commercial settings. The maximum power dissipation of 245 W ensures reliable performance under demanding load conditions.
Featuring a maximum gate-emitter voltage of ±30 V and a low collector emitter saturation voltage of 1.6 V, this device supports high-speed fast switching, contributing to energy efficiency and reduced power loss in applications such as motor drives, inverters, and power supplies.
The operating temperature range from -40°C to 175°C allows usage in extreme environmental conditions, suitable for automotive, industrial manufacturing, and HVAC systems. Additionally, it complies with the RoHS directive, ensuring environmentally friendly lead-free plating.
The device features a 3-pin TO-247GE package for secure through-hole mounting. Maximum continuous collector current rating of 50 A for heavy-duty operation. Supports collector emitter voltage of 650 V with 245 W power dissipation.
Maximum gate emitter voltage of ±30 V supports flexible control voltages. Low collector emitter saturation voltage of 1.6 V promotes energy efficiency. Wide operating temperature range (-40°C to 175°C) for harsh environments.
Compliant with RoHS standards and Pb-free for environmental safety. Designed with fast switching and low switching loss capabilities.
This ROHM IGBT module RGWS00TS65GC13 is ideal for industrial electronics, power management, automated manufacturing, motor controls, and other high power applications requiring reliable switching performance. Its rugged TO-247GE through-hole package supports easy assembly and thermal management within complex electronic systems.
Explore more ROHM semiconductor devices and power components for diverse industrial and commercial uses at EnvMart.
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Frequently Asked Questions
The maximum continuous collector current of this IGBT is 50 A.
This model can withstand a maximum collector emitter voltage of 650 V.
The maximum power dissipation for this IGBT is 245 W.
The operating temperature range is from -40°C to 175°C.
It uses a 3-pin TO-247GE package suitable for through-hole mounting.
The maximum gate emitter voltage is ±30 V, allowing for flexible control voltages.
The maximum collector emitter saturation voltage is 1.6 V, which promotes energy efficiency.
Yes, it is RoHS compliant with Pb-free lead plating for environmental safety.
This IGBT is suitable for power management, motor control circuits, and other high power applications.
The TO-247GE package has 3 pins.
It is designed with fast switching and low switching loss capabilities, contributing to high efficiency applications.
The country of origin for this IGBT is India.
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