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| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Model | RGTH80TS65GC13 |
| Mount Type | Through Hole |
| Series | RGTH80TS65GC13 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247GE |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 40A |
| Maximum Collector Emitter Voltage Vceo | 650V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.6V |
| Maximum Power Dissipation Pd | 234W |
| Maximum Gate Emitter Voltage VGEO | ±30 V |
ROHM RGTH80TS65GC13 is a high-performance IGBT power transistor designed for demanding electronic applications requiring robust current and voltage handling capabilities. It features a maximum continuous collector current of 40 A and a collector emitter voltage of 650 V, making it suitable for higher power electronics.
This transistor comes in a TO-247GE package with through-hole mounting and three pins, which provides durable and secure connections to PCBs. The device offers a maximum power dissipation of 234 W, ensuring that it can handle substantial heat during operation while maintaining reliability.
The RGTH80TS65GC13 operates efficiently with a low collector emitter saturation voltage of 1.6 V, which helps reduce power loss during switching. It supports high-speed switching and features low switching losses with soft switching characteristics for improved performance in power conversion and motor control applications.
The transistor is rated for a gate emitter voltage of ±30 V and functions reliably across a wide temperature range from -40°C up to 175°C. Its Pb-free lead plating complies with RoHS environmental standards, supporting sustainable manufacturing practices.
This ROHM IGBT is commonly used in industrial electronics, laboratory equipment, power management circuits, and automotive electronics where efficient switching and power handling are critical. Its robust construction and specifications make it suitable for continuous heavy-duty use in diverse equipment and manufacturing scenarios.
This transistor supports high-speed switching with low collector emitter saturation voltage. Designed for through-hole mounting and has 3 pins for reliable connections. Maximum power dissipation capacity of 234 W ensures efficient heat handling.
Operates within temperature range from -40°C to 175°C. The device is RoHS compliant and features Pb-free lead plating for environmental safety. Capable of withstanding gate emitter voltage up to ±30 V. Ideal for industrial and electronic power and connector applications.
Explore more semiconductor components and IGBTs in the Electronics & Electricals category at EnvMart for all your industrial and electronic design needs.
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