Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
24/7 Customer Support

Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries

24/7 Customer Support
Save up to 28% with GST Input

Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries

Lowest Price Challenge
# Lowest Price Challenge

If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon

Lowest Price Challenge
100% Original Products

Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase

ROHM IGBT Power Transistor 40 A 650 V 3-Pin TO-247GE Through Hole RGTH80TS65GC13

Category IGBT Brand ROHM Condition New

Specifications

Country of Origin India
Brand ROHM
Model RGTH80TS65GC13
Mount Type Through Hole
Series RGTH80TS65GC13
Maximum Operating Temperature 175°C
Package Type TO-247GE
Minimum Operating Temperature -40°C
Standards/Approvals RoHS
Pin Count 3
Maximum Continuous Collector Current Ic 40A
Maximum Collector Emitter Voltage Vceo 650V
Maximum Collector Emitter Saturation Voltage VceSAT 1.6V
Maximum Power Dissipation Pd 234W
Maximum Gate Emitter Voltage VGEO ±30 V

Key Features

  • This transistor supports high-speed switching with low collector emitter saturation voltage.
  • Designed for through-hole mounting and has 3 pins for reliable connections.
  • Maximum power dissipation capacity of 234 W ensures efficient heat handling.
  • Operates within temperature range from -40°C to 175°C.
  • The device is RoHS compliant and features Pb-free lead plating for environmental safety.
  • Capable of withstanding gate emitter voltage up to ±30 V.
  • Ideal for industrial and electronic power and connector applications.

Product Description

ROHM RGTH80TS65GC13 is a high-performance IGBT power transistor designed for demanding electronic applications requiring robust current and voltage handling capabilities. It features a maximum continuous collector current of 40 A and a collector emitter voltage of 650 V, making it suitable for higher power electronics.

This transistor comes in a TO-247GE package with through-hole mounting and three pins, which provides durable and secure connections to PCBs. The device offers a maximum power dissipation of 234 W, ensuring that it can handle substantial heat during operation while maintaining reliability.

The RGTH80TS65GC13 operates efficiently with a low collector emitter saturation voltage of 1.6 V, which helps reduce power loss during switching. It supports high-speed switching and features low switching losses with soft switching characteristics for improved performance in power conversion and motor control applications.

The transistor is rated for a gate emitter voltage of ±30 V and functions reliably across a wide temperature range from -40°C up to 175°C. Its Pb-free lead plating complies with RoHS environmental standards, supporting sustainable manufacturing practices.

This ROHM IGBT is commonly used in industrial electronics, laboratory equipment, power management circuits, and automotive electronics where efficient switching and power handling are critical. Its robust construction and specifications make it suitable for continuous heavy-duty use in diverse equipment and manufacturing scenarios.

This transistor supports high-speed switching with low collector emitter saturation voltage. Designed for through-hole mounting and has 3 pins for reliable connections. Maximum power dissipation capacity of 234 W ensures efficient heat handling.

Operates within temperature range from -40°C to 175°C. The device is RoHS compliant and features Pb-free lead plating for environmental safety. Capable of withstanding gate emitter voltage up to ±30 V. Ideal for industrial and electronic power and connector applications.

Explore more semiconductor components and IGBTs in the Electronics & Electricals category at EnvMart for all your industrial and electronic design needs.

ROHM IGBT Power Transistor 40 A 650 V 3-Pin TO-247GE Through Hole RGTH80TS65GC13
Looking to purchase in bulk?
  • Purchase item in bulk quantity
  • Get best price for your business

Comments (0)

No customer reviews for the moment.

Frequently Asked Questions

The maximum continuous collector current of the ROHM RGTH80TS65GC13 is 40 A.

This transistor has a maximum collector emitter voltage of 650 V.

It has a maximum power dissipation capacity of 234 W, allowing for efficient heat handling during operation.

The operating temperature range for this model is from -40°C to 175°C.

This IGBT power transistor is designed for through-hole mounting.

The RGTH80TS65GC13 features three pins for reliable connections.

It can withstand a maximum gate emitter voltage of ±30 V.

The maximum collector emitter saturation voltage is 1.6 V.

Yes, this transistor is RoHS compliant and features Pb-free lead plating for environmental safety.

It comes in a TO-247GE package type.

The country of origin for this IGBT power transistor is India.

This model is suitable for industrial electronics, laboratory equipment, power management circuits, and automotive electronics.

Related Products

$4.05
$3.92 Save 3%
Tax included
Quantity
Delivery Time Delivered within 0-3 days
  • Global Payments 140+ CountriesGlobal Payments 140+ Countries
  • Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP WorldGlobal Shipping Fedex/UPS/DHL/Aramex/ BlueDart/Delhivery/DP World
  • 24/7 Customer Support Email/Chat/Telephonic Support24/7 Customer Support Email/Chat/Telephonic Support
$4.05
$3.92
Tax included