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onsemi N-Channel IGBT 40 A 1200 V 3-Pin TO-247 Through Hole FGH40T120SMD

Category IGBT Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Model FGH40T120SMD
Mount Type Through Hole
Series Field Stop
Maximum Operating Temperature 175°C
Package Type TO-247
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 3
Maximum Continuous Collector Current Ic 40A
Maximum Collector Emitter Voltage Vceo 1200V
Maximum Collector Emitter Saturation Voltage VceSAT 1.8V
Channel Type N
Maximum Power Dissipation Pd 555W
Maximum Gate Emitter Voltage VGEO ±25 V
onsemi NGTB40N120IHRWG IGBT, 80 A 1200 V, 3-Pin TO-247, Through HoleBrand onsemi

Key Features

  • Supports a maximum continuous collector current of 40 amperes.
  • Maximum collector-emitter voltage rating is 1200 volts.
  • Power dissipation capacity up to 555 watts ensures high performance.
  • Packaged in a TO-247 through hole type with 3 pins for easy mounting.
  • The maximum gate-emitter voltage is ±25 volts for robust operation.
  • Saturation voltage of 1.8 volts enhances energy efficiency during conduction.
  • Operating temperature ranges from -55°C to 175°C, suitable for high-temperature environments.
  • RoHS compliant, ensuring environmentally safe manufacturing.

Product Description

The onsemi FGH40T120SMD is a reliable N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for high power switching. Featuring a maximum continuous collector current of 40 A and a collector-emitter voltage rating of 1200 V, it supports demanding power electronics applications with efficiency and robustness.

This device is housed in a TO-247 package and supports through-hole mounting, facilitating simple integration into electronic assemblies. With a 3-pin configuration and a maximum gate-emitter voltage tolerance of ±25 V, the transistor offers precise gate control for fast switching operations.

The IGBT provides a maximum power dissipation of 555 W, allowing it to handle significant energy loads, while the saturation voltage of 1.8 V contributes to reduced conduction losses. It is designed to operate reliably across extreme temperature ranges from -55°C to 175°C, making it suitable for industrial, automotive, and power management systems.

Compliant with RoHS standards, the FGH40T120SMD is an environmentally conscious choice. Its Field Stop series technology enhances switching speed and control, benefiting applications in motor drives, industrial machinery, and energy conversion systems.

Supports 40 A continuous collector current. Rated at 1200 V collector-emitter voltage. 555 W maximum power dissipation capability. TO-247 through-hole mount package with 3 pins. Maximum gate-emitter voltage of ±25 V. Saturation voltage of 1.8 V for efficient conduction.

Operating temperature range of -55°C to 175°C. RoHS compliant for environmental safety. Field Stop series technology for enhanced switching. Suitable for power electronics, industrial, and automotive uses.

This discrete IGBT is widely used in power electronics for switching and amplification functions. Its robust electrical characteristics make it ideal for use in industrial automation, HVAC machinery, motor controllers, and power inverters. The through-hole mounting facilitates repair and replacement in system designs.

Explore a range of semiconductor components within the onsemi brand and the IGBT category on EnvMart for your electronic design needs.

onsemi N-Channel IGBT 40 A 1200 V 3-Pin TO-247 Through Hole FGH40T120SMD
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