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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Model | FGH40T120SMD |
| Mount Type | Through Hole |
| Series | Field Stop |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 40A |
| Maximum Collector Emitter Voltage Vceo | 1200V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.8V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 555W |
| Maximum Gate Emitter Voltage VGEO | ±25 V |
| onsemi NGTB40N120IHRWG IGBT, 80 A 1200 V, 3-Pin TO-247, Through HoleBrand | onsemi |
The onsemi FGH40T120SMD is a reliable N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for high power switching. Featuring a maximum continuous collector current of 40 A and a collector-emitter voltage rating of 1200 V, it supports demanding power electronics applications with efficiency and robustness.
This device is housed in a TO-247 package and supports through-hole mounting, facilitating simple integration into electronic assemblies. With a 3-pin configuration and a maximum gate-emitter voltage tolerance of ±25 V, the transistor offers precise gate control for fast switching operations.
The IGBT provides a maximum power dissipation of 555 W, allowing it to handle significant energy loads, while the saturation voltage of 1.8 V contributes to reduced conduction losses. It is designed to operate reliably across extreme temperature ranges from -55°C to 175°C, making it suitable for industrial, automotive, and power management systems.
Compliant with RoHS standards, the FGH40T120SMD is an environmentally conscious choice. Its Field Stop series technology enhances switching speed and control, benefiting applications in motor drives, industrial machinery, and energy conversion systems.
Supports 40 A continuous collector current. Rated at 1200 V collector-emitter voltage. 555 W maximum power dissipation capability. TO-247 through-hole mount package with 3 pins. Maximum gate-emitter voltage of ±25 V. Saturation voltage of 1.8 V for efficient conduction.
Operating temperature range of -55°C to 175°C. RoHS compliant for environmental safety. Field Stop series technology for enhanced switching. Suitable for power electronics, industrial, and automotive uses.
This discrete IGBT is widely used in power electronics for switching and amplification functions. Its robust electrical characteristics make it ideal for use in industrial automation, HVAC machinery, motor controllers, and power inverters. The through-hole mounting facilitates repair and replacement in system designs.
Explore a range of semiconductor components within the onsemi brand and the IGBT category on EnvMart for your electronic design needs.
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