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STMicroelectronics N-Channel IGBT 60 A 600 V, 3-Pin TO-247 Through Hole STGW30NC60KD

Category IGBT Brand STMicroelectronics Condition New

Specifications

Country of Origin China
Brand STMicroelectronics
Height 20.15mm
Model STGW30NC60KD
Mount Type Through Hole
Series Rugged
Energy Rating 1435mJ
Maximum Operating Temperature 150°C
Package Type TO-247
Minimum Operating Temperature -55°C
Standards/Approvals JEDEC Standard JESD97
Pin Count 3
Maximum Continuous Collector Current Ic 60A
Maximum Collector Emitter Voltage Vceo 600V
Maximum Collector Emitter Saturation Voltage VceSAT 2.7V
Channel Type N
Maximum Power Dissipation Pd 200W
Maximum Gate Emitter Voltage VGEO ±20 V
onsemi FGH40T100SMD IGBT, 80 A 1000 V, 3-Pin TO-247, Through HoleBrand ON Semiconductor

Key Features

  • High efficiency and fast switching capability for power applications.
  • Maximum continuous collector current rating of 60 A for robust performance.
  • Maximum collector emitter voltage of 600 V suitable for medium voltage use.
  • Package type is TO-247 with through-hole mounting for easy PCB integration.
  • Maximum power dissipation of 200 W ensures reliable thermal handling.
  • Low saturation voltage of 2.7 V enhances device efficiency.
  • Operating temperature range from -55°C to 150°C supports wide temperature applications.
  • Compliant with JEDEC Standard JESD97 ensuring industry standard quality.

Product Description

STMicroelectronics STGW30NC60KD is an N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for power electronics applications requiring a combination of high current handling and fast switching. It features a continuous collector current capacity of 60 A and can withstand collector emitter voltages up to 600 V. Packaged in a standardized 3-Pin TO-247 through-hole form factor, it is suitable for industrial and commercial PCB designs requiring robust power control components.

This IGBT combines the advantages of MOSFET gate-drive characteristics with the power capabilities of bipolar transistors to deliver efficient switching performance. With a maximum power dissipation of 200 W, it allows reliable operation in demanding electronic circuits.

The device exhibits a low collector emitter saturation voltage of 2.7 V minimizing conduction losses during operation. It supports a wide operating temperature range from -55°C to 150°C, suitable for harsh industrial environments. The part complies with JEDEC Standard JESD97, ensuring recognized performance and reliability.

The rugged series design and 1435 mJ energy rating provide enhanced robustness and protection against switching transients. This makes the STGW30NC60KD suitable for a variety of applications including motor control, power supplies, inverters, and other industrial power electronics.

High efficiency and fast switching capability for power applications. Maximum continuous collector current rating of 60 A for robust performance. Maximum collector emitter voltage of 600 V suited for medium voltage use. Package type is TO-247 with through-hole mounting for easy PCB integration.

Maximum power dissipation of 200 W ensures reliable thermal handling. Low saturation voltage of 2.7 V reduces conduction losses. Operating temperature range from -55°C to 150°C supports wide temperature environments. JEDEC Standard JESD97 certified for quality and reliability.

Rugged series with 1435 mJ energy rating for enhanced durability.

The STGW30NC60KD IGBT is ideal for industrial, manufacturing, HVAC, power management, and electronic control systems where efficient power switching is critical. Its through-hole TO-247 package simplifies mounting and replacement. Explore more semiconductor components and power devices in EnvMart's comprehensive catalog.

STMicroelectronics N-Channel IGBT 60 A 600 V, 3-Pin TO-247 Through Hole STGW30NC60KD
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Frequently Asked Questions

The maximum continuous collector current rating of this IGBT is 60 A.

This model can withstand a maximum collector emitter voltage of 600 V.

The maximum power dissipation of this IGBT is 200 W, ensuring reliable thermal handling.

The operating temperature range for this model is from -55°C to 150°C.

It is packaged in a TO-247 form factor with through-hole mounting for easy PCB integration.

The low collector emitter saturation voltage of this model is 2.7 V, which minimizes conduction losses.

This IGBT complies with JEDEC Standard JESD97, ensuring recognized performance and reliability.

The energy rating of this model is 1435 mJ, providing enhanced robustness against switching transients.

This IGBT features a 3-pin configuration.

It features an N-channel design, suitable for various power applications.

This IGBT is suitable for applications including motor control, power supplies, and inverters in industrial power electronics.

The height of this model is 20.15 mm.

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