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STMicroelectronics N-Channel IGBT 80 A 650 V TO-3P Through Hole STGWT60H65DFB

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STMicroelectronics N-Channel IGBT 80 A 650 V TO-3P Through Hole STGWT60H65DFB

Name: STMicroelectronics N-Channel IGBT 80 A 650 V TO-3P Through Hole STGWT60H65DFB
Brand: STMicroelectronics
SKU: 379644
Price: 5.45 USD
Availability: InStock

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Category IGBT Brand STMicroelectronics Condition New

Specifications

Country of Origin	India
Brand	STMicroelectronics
Model	STGWT60H65DFB
Mount Type	Through Hole
Series	HB
Maximum Operating Temperature	175°C
Package Type	TO-3P
Minimum Operating Temperature	-55°C
Standards/Approvals	RoHS
Pin Count	3
Maximum Continuous Collector Current Ic	80A
Maximum Collector Emitter Voltage Vceo	650V
Maximum Collector Emitter Saturation Voltage VceSAT	2V
Channel Type	N
Maximum Power Dissipation Pd	375W
Maximum Gate Emitter Voltage VGEO	±20 V
onsemi FGA20N120FTDTU IGBT, 40 A 1200 V, 3-Pin TO-3PN, Through HoleBrand	onsemi

Key Features

This device features a maximum continuous collector current of 80 Amperes.
It supports a maximum collector emitter voltage of 650 Volts ensuring robust voltage handling.
The maximum power dissipation rating is 375 Watts for reliable thermal performance.
The transistor has a switching speed of up to 1 MHz, suitable for high-frequency applications.
Designed with a ±20 V maximum gate emitter voltage for stable gate control.
Operational temperature range spans from -55°C to 175°C, supporting diverse environmental conditions.
3-pin through-hole TO-3P package simplifies mounting for power electronics.
The device complies with RoHS standards indicating lead-free and environmentally safe manufacturing.

Product Description

STMicroelectronics STGWT60H65DFB is an N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for power semiconductor applications. It is rated for a maximum continuous collector current of 80 A and a collector emitter voltage of 650 V, housed in a rugged 3-Pin TO-3P through-hole package. This IGBT offers high efficiency with fast switching capabilities up to 1 MHz, making it suitable for demanding industrial and electronic power control environments.

Combining the simple gate-drive characteristics of MOSFETs with the high current and low saturation voltage of bipolar transistors, the STGWT60H65DFB delivers excellent performance. It supports a maximum power dissipation of 375 W, ensuring reliability in continuous operation within its thermal limits.

The device supports a wide operating temperature range from -55°C to 175°C, accommodating harsh environmental conditions typical in industrial, manufacturing, and HVAC control systems.

The transistor is compliant with RoHS environmental standards, promoting lead-free construction and sustainability. The 3-pin through-hole mounting design facilitates easy integration into power assemblies and custom circuit boards.

Maximum Continuous Collector Current: 80 A. Maximum Collector Emitter Voltage: 650 V. Maximum Power Dissipation: 375 W. Switching Speed: 1 MHz. Maximum Gate Emitter Voltage: ±20 V. Operating Temperature Range: -55°C to 175°C.

Package Type: TO-3P through hole. RoHS Compliant.

This IGBT is well suited for industrial power electronics, electronic control systems, power inverters, motor drives, and other applications requiring efficient high-speed switching and high current handling capabilities.

Explore our Electronics & Electricals category for a comprehensive range of semiconductor components suited for your design needs on EnvMart.