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| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Model | RGTH50TS65GC13 |
| Mount Type | Through Hole |
| Series | RGTH50TS65GC13 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247GE |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 25A |
| Maximum Collector Emitter Voltage Vceo | 650V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.6V |
| Maximum Power Dissipation Pd | 174W |
| Maximum Gate Emitter Voltage VGEO | ±30 V |
ROHM RGTH50TS65GC13 is a Field Stop Trench Insulated Gate Bipolar Transistor (IGBT) designed for high speed switching and efficient power handling in industrial electronic applications. Rated for a maximum continuous collector current of 25 A and maximum collector emitter voltage of 650 V, it provides robust performance with a low collector emitter saturation voltage of 1.6 V. The device is housed in a TO-247GE package with 3 pins suitable for through-hole mounting, making it easy to incorporate into power electronics circuits.
This IGBT supports a maximum power dissipation of 174 W and operates in a wide temperature range from -40°C to 175°C, ensuring reliability under demanding environmental conditions. The maximum gate emitter voltage rating of ±30 V allows for flexible gate drive voltages. The component is RoHS compliant and features lead-free plating, supporting environmentally responsible manufacturing processes.
Due to its high-speed switching and soft switching characteristics, the RGTH50TS65GC13 IGBT is optimized for efficient performance in power inverters, motor drives, and other industrial power control systems. Its robust electrical and thermal features make it suitable for applications requiring fast switching with minimal loss.
Rated maximum continuous collector current is 25 amperes. Maximum collector emitter voltage of 650 volts. Low collector emitter saturation voltage of 1.6 volts for high efficiency. TO-247GE package with three pins and through-hole mounting.
Maximum power dissipation rated at 174 watts. Wide operating temperature range from -40°C to 175°C. Maximum gate emitter voltage rating of ±30 volts. RoHS compliant and lead-free plating. High speed switching with low switching loss and soft switching capability.
Ideal for industrial power electronics applications such as inverters and motor drives. Explore more IGBTs and power semiconductors on EnvMart to find the right components for your industrial, manufacturing, or electronic design needs.
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