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ROHM Insulated Gate Bipolar Transistor IGBT, 25 A 650 V, 3-Pin TO-247GE Through Hole RGTH50TS65GC13

Category IGBT Brand ROHM Condition New

Specifications

Country of Origin India
Brand ROHM
Model RGTH50TS65GC13
Mount Type Through Hole
Series RGTH50TS65GC13
Maximum Operating Temperature 175°C
Package Type TO-247GE
Minimum Operating Temperature -40°C
Standards/Approvals RoHS
Pin Count 3
Maximum Continuous Collector Current Ic 25A
Maximum Collector Emitter Voltage Vceo 650V
Maximum Collector Emitter Saturation Voltage VceSAT 1.6V
Maximum Power Dissipation Pd 174W
Maximum Gate Emitter Voltage VGEO ±30 V

Key Features

  • Rated maximum continuous collector current is 25 amperes.
  • Maximum collector emitter voltage is 650 volts.
  • Features a TO-247GE package with 3 pins and through-hole mounting.
  • Maximum power dissipation rated at 174 watts.
  • Operates reliably between -40°C and 175°C.
  • Maximum gate emitter voltage rating is ±30 volts.
  • Low collector emitter saturation voltage of 1.6 volts ensures efficient operation.
  • Compliant with RoHS environmental standards and lead-free plating.

Product Description

ROHM RGTH50TS65GC13 is a Field Stop Trench Insulated Gate Bipolar Transistor (IGBT) designed for high speed switching and efficient power handling in industrial electronic applications. Rated for a maximum continuous collector current of 25 A and maximum collector emitter voltage of 650 V, it provides robust performance with a low collector emitter saturation voltage of 1.6 V. The device is housed in a TO-247GE package with 3 pins suitable for through-hole mounting, making it easy to incorporate into power electronics circuits.

This IGBT supports a maximum power dissipation of 174 W and operates in a wide temperature range from -40°C to 175°C, ensuring reliability under demanding environmental conditions. The maximum gate emitter voltage rating of ±30 V allows for flexible gate drive voltages. The component is RoHS compliant and features lead-free plating, supporting environmentally responsible manufacturing processes.

Due to its high-speed switching and soft switching characteristics, the RGTH50TS65GC13 IGBT is optimized for efficient performance in power inverters, motor drives, and other industrial power control systems. Its robust electrical and thermal features make it suitable for applications requiring fast switching with minimal loss.

Rated maximum continuous collector current is 25 amperes. Maximum collector emitter voltage of 650 volts. Low collector emitter saturation voltage of 1.6 volts for high efficiency. TO-247GE package with three pins and through-hole mounting.

Maximum power dissipation rated at 174 watts. Wide operating temperature range from -40°C to 175°C. Maximum gate emitter voltage rating of ±30 volts. RoHS compliant and lead-free plating. High speed switching with low switching loss and soft switching capability.

Ideal for industrial power electronics applications such as inverters and motor drives. Explore more IGBTs and power semiconductors on EnvMart to find the right components for your industrial, manufacturing, or electronic design needs.

ROHM Insulated Gate Bipolar Transistor IGBT, 25 A 650 V, 3-Pin TO-247GE Through Hole RGTH50TS65GC13
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Frequently Asked Questions

The maximum continuous collector current for the RGTH50TS65GC13 IGBT is 25 amperes.

This model has a maximum collector emitter voltage rating of 650 volts.

The maximum power dissipation rated for this IGBT is 174 watts.

It operates reliably within a temperature range of -40°C to 175°C.

The IGBT is housed in a TO-247GE package with 3 pins suitable for through-hole mounting.

The maximum gate emitter voltage rating for this model is ±30 volts.

It features a low collector emitter saturation voltage of 1.6 volts, ensuring efficient operation.

Yes, the RGTH50TS65GC13 is RoHS compliant and features lead-free plating.

This IGBT is optimized for applications such as power inverters and motor drives in industrial power control systems.

The TO-247GE package has 3 pins.

This model belongs to the RGTH50TS65GC13 series.

Key features include high-speed switching, low saturation voltage, and a wide operating temperature range.

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