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onsemi IGBT 650 V, 50 A, 3-Pin TO-247-3L, Surface Mount FGHL50T65MQDT
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 4.82mm |
| Length | 15.87mm |
| Model | FGHL50T65MQDT |
| Width | 20.82mm |
| Mount Type | Surface |
| Series | FGHL50T65MQDT |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247-3L |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 650V |
| Maximum Power Dissipation Pd | 268W |
| Maximum Gate Emitter Voltage VGEO | 20 V |
Key Features
- The device features a maximum collector emitter voltage of 650 V.
- It supports a maximum power dissipation of 268 W for high-performance needs.
- Comes in a TO-247-3L package with surface mount type and 3 pins.
- Operates within a temperature range of -55°C to 175°C ensuring reliability.
- Maximum gate emitter voltage rating is 20 V for robust control.
- Physical dimensions include length 15.87 mm, width 20.82 mm, and height 4.82 mm.
- Compliant with RoHS standards for environmental safety.
- Suitable for solar inverters, UPS systems, EV charging stations, and energy storage systems.
Product Description
onsemi FGHL50T65MQDT is a 650 V, 50 A Insulated Gate Bipolar Transistor (IGBT) featuring a 3-pin TO-247-3L surface mount package designed for efficient power switching applications.
This IGBT balances low saturation voltage (Vce(sat)) and switching losses while providing well controllable turnoff and Vce overshoot, optimizing performance in medium switching speed operations.
Featuring a maximum power dissipation rating of 268 W and voltage rating of 650 V, it is engineered to operate reliably within a temperature range from -55°C to 175°C, with a maximum gate emitter voltage of 20 V.
The compact dimensions (L: 15.87 mm, W: 20.82 mm, H: 4.82 mm) and RoHS compliance make it environmentally friendly and suitable for surface mounting on printed circuit boards.
This component is ideal for industrial and commercial applications including solar inverters, uninterruptible power supplies (UPS), electric vehicle (EV) charging stations, and energy storage systems (ESS) requiring efficient power conversion and reliable switching.
The device features a maximum collector emitter voltage of 650 V. Supports a maximum power dissipation of 268 W. Compact TO-247-3L surface mount package with 3 pins. Wide operating temperature range from -55°C to 175°C. Maximum gate emitter voltage of 20 V.
Environmentally compliant with RoHS standards. Ideal for high-performance power conversion applications. Explore more IGBT power semiconductor components suitable for industrial and renewable energy solutions at EnvMart.
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Frequently Asked Questions
The maximum collector emitter voltage of this IGBT is 650 V.
It supports a maximum power dissipation of 268 W.
This model operates reliably within a temperature range of -55°C to 175°C.
The dimensions of the TO-247-3L package are 15.87 mm in length, 20.82 mm in width, and 4.82 mm in height.
The maximum gate emitter voltage rating is 20 V.
It comes in a surface mount type configuration.
This IGBT is suitable for applications such as solar inverters, UPS systems, EV charging stations, and energy storage systems.
Yes, it is compliant with RoHS standards for environmental safety.
The TO-247-3L package has 3 pins.
The series name for this IGBT is FGHL50T65MQDT.
The country of origin for this IGBT is India.
The voltage rating of this IGBT is 650 V.
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