onsemi IGBT 650 V, 3-Pin TO-247-3L Package, Surface Mount FGHL75T65MQDT

onsemi FGHL75T65MQDT is a high-speed insulated gate bipolar transistor (IGBT) featuring a 650 V maximum collector emitter voltage and 375 W power dissipation capability. It comes in a 3-pin TO-247-3L package designed for surface mounting, making it suitable for compact power electronics assemblies.

This device provides an excellent balance between ON-state voltage drop and switching losses, minimizing energy consumption in high-performance power conversion systems such as solar inverters, uninterruptible power supplies (UPS), electric vehicle (EV) charging stations, and energy storage systems (ESS).

The FGHL75T65MQDT has a maximum gate emitter voltage of 20 V and is rated for operation in extreme temperature ranges from -55°C to 175°C, ensuring reliable function under harsh conditions.

Its positive temperature coefficient allows for easy paralleling with other devices without risk of thermal runaway. The optimized low conduction and switching losses contribute to improved system efficiency and reduced heat generation.

The transistor complies with RoHS environmental standards, ensuring it meets strict regulations for hazardous substances in electronic components. The device has a compact length of 15.87 mm, width of 20.82 mm, and height of 4.82 mm, allowing it to fit in space-constrained PCB designs.

Its 3-pin configuration supports straightforward integration into power modules and assemblies. The surface mounting package type TO-247-3L provides mechanical stability and thermal dissipation efficiency.

This IGBT is well-suited for use in industrial, renewable energy, automotive, and power management applications requiring robust and efficient semiconductor switches. It enables designers to achieve high switching frequencies with minimal losses.

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