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ROHM Insulated Gate Bipolar Transistor (IGBT) 40 A 650 V 3-Pin TO-247GE Through Hole RGTH80TS65DGC13
Specifications
| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Model | RGTH80TS65DGC13 |
| Mount Type | Through Hole |
| Series | RGTH80TS65DGC13 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247GE |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 40A |
| Maximum Collector Emitter Voltage Vceo | 650V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.6V |
| Maximum Power Dissipation Pd | 234W |
| Maximum Gate Emitter Voltage VGEO | ±30 V |
Key Features
- This IGBT features a maximum continuous collector current of 40 A.
- It sustains a maximum collector emitter voltage of 650 V.
- Maximum power dissipation is rated at 234 W.
- The device supports operating temperatures from -40°C to 175°C.
- Maximum gate emitter voltage tolerance is ±30 V, ensuring reliable gate control.
- It has a low collector emitter saturation voltage of 1.6 V for efficient conduction.
- The package type is TO-247GE with a through hole mount suitable for robust mounting.
- Contains 3 pins in a through-hole mounting configuration.
Product Description
ROHM RGTH80TS65DGC13 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed to provide efficient high-speed switching capabilities for industrial and electronic applications. Featuring a continuous collector current rating of 40 A and a maximum collector emitter voltage of 650 V, this IGBT supports demanding power switching requirements with low loss due to its 1.6 V maximum collector emitter saturation voltage.
The device is packaged in a TO-247GE format with a through-hole mount, providing robust mechanical stability and ease of assembly on printed circuit boards for power electronics, motor drives, and inverter circuits. Its maximum power dissipation capacity of 234 W ensures reliable operation under high loads.
Operating temperature ranges from -40°C to 175°C offer versatility for use in a wide range of industrial environments including power conversion systems, industrial automation, and renewable energy systems. The ±30 V maximum gate emitter voltage allows for precise gate control, optimizing switch characteristics and minimizing switching losses.
This IGBT includes built-in very fast and soft recovery freewheeling diode (FRD), contributing to soft switching performance and reduced switching loss. The product is Pb free, RoHS compliant, and environmentally friendly for sustainable electronics manufacturing.
Its use cases span industrial power electronics, manufacturing equipment, commercial HVAC systems, and other applications requiring high efficiency and reliable power switching devices.
This IGBT features a maximum continuous collector current of 40 A. A maximum collector emitter voltage rating of 650 V ensures robustness in high voltage circuits. Maximum power dissipation of 234 W supports high load capacity.
TO-247GE package with through-hole mount enables secure assembly. Low collector emitter saturation voltage of 1.6 V enhances energy efficiency. The device tolerates a wide operating temperature range from -40°C to 175°C.
Maximum gate emitter voltage is ±30 V to provide reliable gate switching. Supports fast and soft switching with built-in freewheeling diode. RoHS compliant and lead free, aligned with environmental standards. Suitable for industrial, laboratory, manufacturing, and HVAC applications.
Explore the Electronics & Electricals section at EnvMart for more IGBTs and semiconductor devices from ROHM and other leading brands.
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Frequently Asked Questions
The maximum continuous collector current of this IGBT is 40 A.
It has a maximum collector emitter voltage rating of 650 V.
The maximum power dissipation capacity of this model is 234 W.
The maximum collector emitter saturation voltage is 1.6 V.
This IGBT operates within a temperature range of -40°C to 175°C.
The package type is TO-247GE, and it features a through-hole mounting configuration.
The maximum gate emitter voltage tolerance is ±30 V.
This IGBT has 3 pins in a through-hole mounting configuration.
Yes, this IGBT is RoHS compliant and Pb free, aligning with environmental standards.
This IGBT is suitable for industrial power electronics, manufacturing equipment, and commercial HVAC systems.
It includes a built-in very fast and soft recovery freewheeling diode (FRD) for enhanced switching performance.
The country of origin for this IGBT is India.
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