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| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Model | RGCL60TS60DGC13 |
| Mount Type | Through Hole |
| Series | RGCL60TS60DGC13 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247GE |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 30A |
| Maximum Collector Emitter Voltage Vceo | 600V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.4V |
| Maximum Power Dissipation Pd | 111W |
| Maximum Gate Emitter Voltage VGEO | ±30 V |
ROHM RGCL60TS60DGC13 IGBT is a high-performance insulated gate bipolar transistor module designed for a wide range of high voltage and high current power applications. Featuring a continuous collector current rating of 30 A and a maximum collector emitter voltage of 600 V, it supports energy-saving operation through its low collector emitter saturation voltage of 1.4 V, contributing to high efficiency in power switching.
Encapsulated in a 3-pin TO-247GE package, this IGBT supports through hole mounting ensuring robust mechanical stability and efficient heat dissipation, making it suitable for industrial and manufacturing environments.
The device features a built-in very fast and soft recovery freewheeling diode, suitable for soft switching applications that reduce switching losses and electromagnetic interference.
Operating reliably within a wide temperature range from -40°C to 175°C, it complies with RoHS standards and implements Pb-free lead plating to meet environmental safety requirements.
This IGBT is ideal for use in motor drives, power inverters, and other industrial power control systems requiring high current and voltage capability with efficient operation. Maximum continuous collector current: 30 A. Maximum collector emitter voltage: 600 V.
Low collector emitter saturation voltage: 1.4 V. Package type: TO-247GE. Mount type: Through hole. Operating temperature range: -40°C to 175°C. Built-in very fast and soft recovery diode for soft switching. RoHS compliant and Pb-free lead plating.
Maximum power dissipation: 111 W. Maximum gate emitter voltage: ±30 V.
Explore more high-quality semiconductor components and IGBT modules in our Electronics & Electricals category at EnvMart for industrial, manufacturing, and power management applications.
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