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ROHM Type N-Channel IGBT TO-247N, 75 A 650 V, 3-Pin Through Hole RGSX5TS65EGC11
Specifications
| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Model | RGSX5TS65EGC11 |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247N |
| Minimum Operating Temperature | -40°C |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 75A |
| Maximum Collector Emitter Voltage Vceo | 650V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.15V |
| Channel Type | Type N |
| Maximum Power Dissipation Pd | 404W |
| Maximum Gate Emitter Voltage VGEO | ±30 V |
Key Features
- This IGBT is packaged in a TO-247N through hole mount type.
- Maximum continuous collector current is rated at 75 A.
- Maximum collector emitter voltage is 650 V, suitable for high voltage switching.
- The maximum power dissipation of the device is 404 W allowing high power handling.
- The device supports switching speeds up to 1 MHz enhancing performance in switching circuits.
- Maximum gate emitter voltage rating is ±30 V providing robustness against voltage spikes.
- Collector emitter saturation voltage is low at 2.15 V improving efficiency.
- Operating temperature range from -40°C to 175°C supports demanding thermal environments.
Product Description
ROHM RGSX5TS65EGC11 is a high-performance Type N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for power electronics requiring efficient switching and high current capability. This device features a 3-pin TO-247N package suitable for through hole mounting, making it ideal for robust hardware integrations.
The IGBT supports a maximum continuous collector current of 75 A and a maximum collector emitter voltage of 650 V, allowing it to handle significant power loads up to 404 W power dissipation. It is optimized for a switching speed of 1 MHz, enhancing responsiveness and efficiency in power control circuits.
Robust electrical characteristics include a maximum gate emitter voltage of ±30 V and a low saturation voltage of 2.15 V, minimizing conduction losses. This device is rated for operation in a wide temperature range from -40°C to 175°C, securing reliability in extreme environmental conditions.
The RGSX5TS65EGC11 complies with RoHS standards and features Pb-free lead plating, making it environmentally friendly. Additionally, it is qualified under the AEC-Q101 standard, certifying its suitability for automotive heater applications and other demanding industrial use cases.
This type of IGBT is well suited for industrial, automotive, HVAC, and manufacturing applications where efficient power switching and durability are essential. Its through hole mount and package design ensure ease of installation in high-power circuits.
This IGBT is packaged in a TO-247N through hole mount type. Maximum continuous collector current is rated at 75 A. Maximum collector emitter voltage is 650 V, suitable for high voltage switching. The maximum power dissipation of the device is 404 W allowing high power handling.
The device supports switching speeds up to 1 MHz enhancing performance in switching circuits. Maximum gate emitter voltage rating is ±30 V providing robustness against voltage spikes. Collector emitter saturation voltage is low at 2.15 V improving efficiency.
Operating temperature range from -40°C to 175°C supports demanding thermal environments. Package features Pb-free lead plating and is RoHS compliant. Designed for reliability in automotive heater applications with AEC-Q101 qualification.
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Frequently Asked Questions
The maximum continuous collector current for this IGBT is rated at 75 A.
It can handle a maximum collector emitter voltage of 650 V.
The maximum power dissipation of this device is 404 W, allowing for high power handling.
This IGBT supports switching speeds up to 1 MHz, enhancing performance in switching circuits.
The operating temperature range for this model is from -40°C to 175°C.
The maximum gate emitter voltage rating is ±30 V, providing robustness against voltage spikes.
The collector emitter saturation voltage is low at 2.15 V, which improves efficiency.
This IGBT is packaged in a TO-247N through hole mount type, suitable for robust hardware integrations.
Yes, this IGBT features Pb-free lead plating and complies with RoHS standards.
This IGBT is well suited for industrial, automotive, HVAC, and manufacturing applications where efficient power switching is essential.
The pin count for this device is 3.
The country of origin for this IGBT is India.
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