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Infineon IGBT Single Transistor IC 28 A 650 V TO-220 IKP28N65ES5XKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IKP28N65ES5XKSA1 |
| Series | 5th Generation |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | JEDEC47/20/22 |
| Maximum Continuous Collector Current Ic | 28A |
| Maximum Collector Emitter Voltage Vceo | 650V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.9V |
| Maximum Power Dissipation Pd | 130W |
| Maximum Gate Emitter Voltage VGEO | ±20 ±30 V |
Key Features
- Capable of handling a maximum power dissipation of 130 W for high power applications.
- Features a maximum gate-emitter voltage of ±20 to ±30 V ensuring safe operation.
- Offers a low maximum collector-emitter saturation voltage of 1.9 V for efficient switching.
- Operates reliably within a temperature range from -40°C to 175°C junction temperature.
- Designed as a 5th generation device with JEDEC47/20/22 standards compliance.
- Includes a high speed smooth switching device suitable for hard and soft switching applications.
- Integrates an anti-parallel diode for enhanced functionality within the same package.
- Does not require gate clamping components simplifying circuit design.
Product Description
Infineon IKP28N65ES5XKSA1 is a high-performance IGBT Single Transistor IC rated for 28 A collector current and 650 V collector-emitter voltage, housed in a TO-220 package. It features a robust design to withstand junction temperatures up to 175°C, making it ideal for demanding industrial and power electronic applications.
This 5th generation IGBT includes an integrated anti-parallel diode, which facilitates efficient switching and reduces the need for additional external components. It provides a smooth, high-speed switching characteristic suitable for both hard and soft switching scenarios.
The device supports a maximum power dissipation of 130 W and a maximum gate-emitter voltage ranging from ±20 V to ±30 V, ensuring reliable operation within specified electrical limits.
Designed and manufactured with JEDEC47/20/22 standards compliance, the component guarantees quality and enduring performance in industrial environments. Its wide operating temperature range from -40°C to 175°C allows deployment in harsh conditions without compromising reliability.
Capable of 28 A continuous current and 650 V blocking voltage. Highly efficient 5th generation technology with low saturation voltage of 1.9 V. Integrated anti-parallel diode reduces circuit complexity. High temperature operation up to 175°C junction temperature.
Suitable for motor drives, power converters, and industrial power supplies. No gate clamping components required simplifies PCB design and cost. TO-220 package facilitates easy mounting and thermal management.
This Infineon IGBT transistor is an essential component for engineers and designers involved in the development of power control and switching devices. It supports improved efficiency, reduced component count, and enhanced reliability in various industrial and commercial applications.
Explore similar Infineon components and other IGBT series within the Electronics & Electricals Semiconductor category on EnvMart for comprehensive solutions tailored to your power electronics needs.
Explore more products in our IGBTs category.
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Frequently Asked Questions
The maximum continuous collector current for the Infineon IGBT model IKP28N65ES5XKSA1 is 28 A.
This model has a maximum collector-emitter voltage rating of 650 V.
It is capable of handling a maximum power dissipation of 130 W.
The maximum gate-emitter voltage for this model ranges from ±20 V to ±30 V.
This IGBT operates reliably within a temperature range from -40°C to 175°C.
The Infineon IGBT is housed in a TO-220 package type.
Yes, it includes an integrated anti-parallel diode, which enhances functionality and reduces the need for additional external components.
The maximum collector-emitter saturation voltage for this model is 1.9 V.
It is designed and manufactured in compliance with JEDEC47/20/22 standards.
This IGBT is suitable for applications such as motor drives, power converters, and industrial power supplies.
The model IKP28N65ES5XKSA1 is a 5th generation IGBT.
The low maximum collector-emitter saturation voltage of 1.9 V contributes to efficient switching performance.
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