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| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Model | RGTH50TS65GC13 |
| Mount Type | Through Hole |
| Series | RGTH50TS65GC13 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247GE |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 25A |
| Maximum Collector Emitter Voltage Vceo | 650V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.6V |
| Maximum Power Dissipation Pd | 174W |
| Maximum Gate Emitter Voltage VGEO | ±30 V |
ROHM RGTH50TS65GC13 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for power switching applications requiring high current and voltage handling capabilities. This device is housed in a TO-247GE package with 3-pin through-hole mounting style, making it suitable for manual or automated PCB assembly processes. It delivers a maximum continuous collector current of 25 A and withstands collector emitter voltages up to 650 V, making it ideal for switching power supplies, motor drives, and industrial power control.
The IGBT features low collector emitter saturation voltage of 1.6 V which minimizes conduction losses and improves efficiency in high-speed switching operations. It supports a wide operating temperature from -40°C to 175°C, ensuring reliable performance even in demanding thermal environments. The maximum power dissipation is rated at 174 W, allowing robust power handling.
This component is Pb-free and compliant with RoHS standards, ensuring eco-friendly manufacturing. The maximum gate emitter voltage is ±30 V, providing flexibility in gate drive voltage design. Though not certified for automotive standard use, it can be leveraged in many industrial and commercial power electronics applications.
Typical industrial and commercial use cases include power management in electrical components, power converters in manufacturing equipment, motor controllers in HVAC systems, and other high power switching environments in laboratories and production lines.
This transistor features a TO-247GE package with three pins for through-hole mounting. Maximum continuous collector current is rated at 25 amperes ensuring robust operation. It supports a maximum collector emitter voltage of 650 volts for high voltage applications.
The device has a maximum power dissipation rating of 174 watts to handle heavy loads. Maximum gate emitter voltage tolerance is ±30 V, providing safe gate control. Collector emitter saturation voltage is 1.6 V, contributing to low power loss.
Operating temperature range extends from -40°C minimum to 175°C maximum, suitable for harsh environments. RoHS compliant and lead plating is Pb-free, endorsing environmental safety. Series RGTH50TS65GC13 device offers automotive standard compliance except it is certified as No for automotive standard.
Explore the ROHM IGBT range and related semiconductor components on EnvMart for advanced electronic and industrial applications.
Explore more products in our IGBTs category.
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