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ROHM IGBT Power Transistor 25 A 650 V 3-Pin TO-247GE Through Hole RGTH50TS65GC13

Category IGBTs Brand ROHM Condition New

Specifications

Country of Origin India
Brand ROHM
Model RGTH50TS65GC13
Mount Type Through Hole
Series RGTH50TS65GC13
Maximum Operating Temperature 175°C
Package Type TO-247GE
Minimum Operating Temperature -40°C
Standards/Approvals RoHS
Pin Count 3
Maximum Continuous Collector Current Ic 25A
Maximum Collector Emitter Voltage Vceo 650V
Maximum Collector Emitter Saturation Voltage VceSAT 1.6V
Maximum Power Dissipation Pd 174W
Maximum Gate Emitter Voltage VGEO ±30 V

Key Features

  • This transistor features a TO-247GE package with three pins for through-hole mounting.
  • Maximum continuous collector current is rated at 25 amperes ensuring robust operation.
  • It supports a maximum collector emitter voltage of 650 volts for high voltage applications.
  • The device has a maximum power dissipation rating of 174 watts to handle heavy loads.
  • Maximum gate emitter voltage tolerance is ±30 V, providing safe gate control.
  • Collector emitter saturation voltage is 1.6 V, contributing to low power loss.
  • Operating temperature range extends from -40°C minimum to 175°C maximum, suitable for harsh environments.
  • RoHS compliant and lead plating is Pb-free, endorsing environmental safety.

Product Description

ROHM RGTH50TS65GC13 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for power switching applications requiring high current and voltage handling capabilities. This device is housed in a TO-247GE package with 3-pin through-hole mounting style, making it suitable for manual or automated PCB assembly processes. It delivers a maximum continuous collector current of 25 A and withstands collector emitter voltages up to 650 V, making it ideal for switching power supplies, motor drives, and industrial power control.

The IGBT features low collector emitter saturation voltage of 1.6 V which minimizes conduction losses and improves efficiency in high-speed switching operations. It supports a wide operating temperature from -40°C to 175°C, ensuring reliable performance even in demanding thermal environments. The maximum power dissipation is rated at 174 W, allowing robust power handling.

This component is Pb-free and compliant with RoHS standards, ensuring eco-friendly manufacturing. The maximum gate emitter voltage is ±30 V, providing flexibility in gate drive voltage design. Though not certified for automotive standard use, it can be leveraged in many industrial and commercial power electronics applications.

Typical industrial and commercial use cases include power management in electrical components, power converters in manufacturing equipment, motor controllers in HVAC systems, and other high power switching environments in laboratories and production lines.

This transistor features a TO-247GE package with three pins for through-hole mounting. Maximum continuous collector current is rated at 25 amperes ensuring robust operation. It supports a maximum collector emitter voltage of 650 volts for high voltage applications.

The device has a maximum power dissipation rating of 174 watts to handle heavy loads. Maximum gate emitter voltage tolerance is ±30 V, providing safe gate control. Collector emitter saturation voltage is 1.6 V, contributing to low power loss.

Operating temperature range extends from -40°C minimum to 175°C maximum, suitable for harsh environments. RoHS compliant and lead plating is Pb-free, endorsing environmental safety. Series RGTH50TS65GC13 device offers automotive standard compliance except it is certified as No for automotive standard.

Explore the ROHM IGBT range and related semiconductor components on EnvMart for advanced electronic and industrial applications.

Explore more products in our IGBTs category.

ROHM IGBT Power Transistor 25 A 650 V 3-Pin TO-247GE Through Hole RGTH50TS65GC13
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Frequently Asked Questions

The maximum continuous collector current for this IGBT is rated at 25 amperes.

It can withstand a maximum collector emitter voltage of 650 volts, making it suitable for high voltage applications.

The maximum power dissipation rating is 174 watts, allowing it to handle heavy loads effectively.

This model operates within a temperature range of -40°C to 175°C, suitable for harsh environments.

It features a TO-247GE package with a through-hole mounting style, suitable for manual or automated PCB assembly.

The collector emitter saturation voltage is 1.6 V, which helps minimize conduction losses.

The maximum gate emitter voltage tolerance is ±30 V, providing flexibility in gate drive voltage design.

Yes, this model is RoHS compliant and features Pb-free lead plating, endorsing environmental safety.

The TO-247GE package has three pins for connection.

This device is part of the RGTH50TS65GC13 series.

It is suitable for power management in electrical components, power converters, and motor controllers in industrial and commercial applications.

The country of origin for this IGBT is India.

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