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ROHM IGBT Power Transistor 30 A 600 V 3-Pin TO-247GE Through Hole RGCL60TS60DGC13
Specifications
| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Model | RGCL60TS60DGC13 |
| Mount Type | Through Hole |
| Series | RGCL60TS60DGC13 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247GE |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 30A |
| Maximum Collector Emitter Voltage Vceo | 600V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.4V |
| Maximum Power Dissipation Pd | 111W |
| Maximum Gate Emitter Voltage VGEO | ±30 V |
Key Features
- Maximum continuous collector current of 30 A supports high current applications.
- Maximum collector emitter voltage of 600 V ensures suitability for high voltage circuits.
- Low collector emitter saturation voltage of 1.4 V enhances energy efficiency.
- Operating temperature range from -40°C to 175°C supports reliable operation in harsh environments.
- Compliant with RoHS standards, featuring lead-free plating.
- Designed with built-in very fast and soft recovery freewheel diode (FRD) for soft switching.
- Through hole mount type for robust PCB mounting.
- 3-pin configuration in TO-247GE package type for easy integration.
Product Description
ROHM RGCL60TS60DGC13 is a trench field stop insulated gate bipolar transistor (IGBT) featuring a maximum continuous collector current (Ic) of 30 A and maximum collector emitter voltage (Vceo) of 600 V. This power transistor comes in a robust 3-pin TO-247GE package with through hole mounting, suitable for industrial power electronics and motor drive applications requiring efficient switching.
Thanks to its low collector emitter saturation voltage (VceSAT) of 1.4 V, the RGCL60TS60DGC13 contributes significantly to energy saving and high efficiency operation in a wide range of high voltage and high current environments. The device operates reliably across a temperature range of -40°C to 175°C, providing dependable performance in demanding industrial and commercial applications.
This IGBT integrates a very fast and soft recovery freewheel diode (FRD) which facilitates soft switching, enhancing device longevity and reducing electromagnetic interference. The product also complies with the RoHS directive, ensuring it meets environmental standards with lead-free plating.
The 3-pin TO-247GE package supports through hole mounting, simplifying installation in power management circuits, inverters, and other semiconductor-based power devices in laboratory, manufacturing, and industrial settings.
Maximum continuous collector current: 30 A. Maximum collector emitter voltage: 600 V. Maximum power dissipation: 111 W. Through hole mount type in TO-247GE package. Low collector emitter saturation voltage of 1.4 V. Operating temperature range: -40°C to 175°C.
Built-in very fast & soft recovery freewheel diode. RoHS compliant with lead-free plating. Not intended for automotive applications.
This ROHM IGBT transistor is ideal for various industrial, manufacturing, and power electronics applications where efficient high current switching and durability under temperature stress are required. EnvMart offers this component to support industrial designers, engineers, and procurement professionals seeking reliable semiconductor devices from trusted brands.
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Frequently Asked Questions
The maximum continuous collector current for this IGBT is 30 A.
The maximum collector emitter voltage of this model is 600 V.
It operates reliably within a temperature range of -40°C to 175°C.
The collector emitter saturation voltage is 1.4 V, which contributes to energy efficiency.
This model features a through hole mount type, suitable for robust PCB mounting.
It comes in a TO-247GE package type with a 3-pin configuration.
Yes, it complies with RoHS standards and features lead-free plating.
The maximum power dissipation for this model is 111 W.
It is suitable for industrial power electronics and motor drive applications requiring efficient switching.
The maximum gate emitter voltage is ±30 V.
This IGBT integrates a very fast and soft recovery freewheel diode (FRD) for enhanced soft switching.
No, this IGBT is not intended for automotive applications.
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