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onsemi Insulated Gate Bipolar Transistor IGBT 650 V 238 W Power Dissipation 3-Pin TO-247-3L Surface Mount FGHL40T65MQDT
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 4.82mm |
| Length | 15.87mm |
| Model | FGHL40T65MQDT |
| Width | 20.82mm |
| Mount Type | Surface |
| Series | FGHL40T65MQDT |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247-3L |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 650V |
| Maximum Power Dissipation Pd | 238W |
| Maximum Gate Emitter Voltage VGEO | 20 V |
Key Features
- Maximum collector-emitter voltage of 650 V for robust operation.
- Handles a maximum power dissipation of 238 W for efficient thermal management.
- Package type is TO-247-3L with surface mount for easy PCB integration.
- Operates within a temperature range of -55°C to 175°C for versatile environmental use.
- Low switching and conduction losses optimize efficiency in solar inverters and EV charging stations.
- Positive temperature coefficient ensures easy paralleling operation.
- 3-pin design allowing for standard electrical connections.
- Complies with RoHS standards ensuring environmental safety.
Product Description
onsemi FGHL40T65MQDT is a high-performance Insulated Gate Bipolar Transistor (IGBT) featuring a maximum collector-emitter voltage (Vceo) of 650 V and a power dissipation rating of 238 W. Packaged in a TO-247-3L form factor with surface mount capabilities, this 3-pin device delivers efficient power switching for demanding industrial and commercial applications.
The device operates within a wide temperature range from -55°C to 175°C, making it suitable for harsh environments. It features a positive temperature coefficient that facilitates easy paralleling operation and superior thermal stability.
This medium switching speed IGBT balances saturation voltage (Vce(sat)) and turn-off losses (Eoff), effectively controlling turnoff voltage overshoot. This makes it ideal for high-performance power conversion in solar inverters, uninterruptible power supplies (UPS), electric vehicle (EV) charging stations, energy storage systems (ESS), and other advanced power electronics.
Design considerations prioritize low switching and conduction losses to improve overall system efficiency. The package type TO-247-3L ensures robust mechanical and thermal interface options, while compliance with RoHS marks alignment with environmental sustainability requirements.
Maximum collector-emitter voltage: 650 V. Maximum power dissipation: 238 W. Package: TO-247-3L surface mount. Operating temperature: -55°C to 175°C. 3-pin configuration. RoHS compliant.
This onsemi IGBT series FGHL40T65MQDT supports industrial, laboratory, renewable energy, automotive electronics, and power conversion manufacturing applications. Its combination of robust power handling, thermal endurance, and ease of integration make it a versatile component for engineering solutions.
Explore high-quality power semiconductor components including the FGHL40T65MQDT IGBT series at EnvMart for reliable and efficient performance.
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Frequently Asked Questions
The maximum collector-emitter voltage (Vceo) of this IGBT is 650 V, allowing for robust operation in various applications.
This model has a maximum power dissipation rating of 238 W, which aids in efficient thermal management during operation.
The IGBT operates within a temperature range of -55°C to 175°C, making it suitable for diverse environmental conditions.
It is packaged in a TO-247-3L form factor, which supports surface mount capabilities for easy integration onto PCBs.
This IGBT features a 3-pin configuration, allowing for standard electrical connections in various applications.
The maximum gate-emitter voltage (VGEO) for this model is 20 V, which is crucial for its operation.
This model complies with RoHS standards, ensuring it meets environmental safety requirements.
It is suitable for applications in solar inverters, electric vehicle charging stations, and other advanced power electronics.
The dimensions of this IGBT are 4.82 mm in height, 15.87 mm in length, and 20.82 mm in width.
The positive temperature coefficient allows for easy paralleling operation, enhancing its thermal stability during use.
Low switching and conduction losses are designed to optimize efficiency, particularly in power conversion applications.
The country of origin for this IGBT is India, indicating its manufacturing location.
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