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Infineon Reverse Conducting Drive IKN06N60RC2ATMA1, 6 A 600 V PG-SOT223
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IKN06N60RC2ATMA1 |
| Maximum Operating Temperature | 150°C |
| Package Type | PG-SOT223 |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | RoHS |
| Maximum Continuous Collector Current Ic | 6A |
| Maximum Collector Emitter Voltage Vceo | 600V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.3V |
| Maximum Power Dissipation Pd | 7.2W |
| Maximum Gate Emitter Voltage VGEO | 20 V |
Key Features
- Maximum continuous collector current rating of 6 A.
- Maximum collector-emitter voltage of 600 V for robust operation.
- Maximum power dissipation of 7.2 W to ensure thermal reliability.
- Integrated diode with enhanced performance and controllability.
- Wide operating temperature range from -40°C to 150°C.
- Rated maximum gate-emitter voltage of 20 V.
- Low collector-emitter saturation voltage of 2.3 V for efficient switching.
- Compliant with RoHS directives ensuring environmentally safe manufacturing.
Product Description
Infineon IKN06N60RC2ATMA1 Reverse Conducting Drive is a monolithically integrated IGBT discrete semiconductor device housed in a compact PG-SOT223 package. It supports a maximum continuous collector current of 6 A and withstands a maximum collector-emitter voltage of 600 V.
This device features an integrated diode, providing improvements in performance, controllability, and reliability compared to previous designs. The maximum power dissipation rating is set at 7.2 W, making it suitable for moderate power applications.
Operating temperature ranges from -40°C up to 150°C allow usage in demanding industrial environments. The device has a maximum gate-emitter voltage rating of 20 V and a low collector-emitter saturation voltage of 2.3 V, which contributes to efficient switching behavior and reduced power loss.
The product conforms to RoHS standards, ensuring compliance with environmental safety regulations. Although not qualified for automotive standards, it is ideal for various industrial electronic applications including power control and drive systems.
Maximum continuous collector current of 6 A. Maximum collector-emitter voltage of 600 V. Power dissipation up to 7.2 W. Integrated diode for enhanced functionality. Broad operating temperature range from -40 to 150 degrees Celsius.
Gate-emitter voltage limit of 20 V. Low saturation voltage of 2.3 V for efficient switching. RoHS compliant for environmental safety. Suitable for industrial electronic power applications.
This reverse conducting IGBT is widely used in industrial electronics, power supply inverters, motor drives, and electronic control systems where robust, reliable switching components are needed.
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Frequently Asked Questions
The maximum continuous collector current rating for this model is 6 A.
It can withstand a maximum collector-emitter voltage of 600 V.
The maximum power dissipation rating is 7.2 W, ensuring thermal reliability.
The operating temperature range is from -40°C to 150°C, suitable for demanding environments.
The maximum gate-emitter voltage rating is 20 V.
The low collector-emitter saturation voltage is 2.3 V, contributing to efficient switching.
This model is housed in a compact PG-SOT223 package.
Yes, it conforms to RoHS standards, ensuring environmentally safe manufacturing.
It is suitable for industrial electronic applications including power control and drive systems.
The integrated diode provides enhanced performance and controllability compared to previous designs.
The country of origin for this product is India.
It can be used in power supply inverters, motor drives, and electronic control systems.
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