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| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Model | RGWSX2TS65GC13 |
| Mount Type | Through Hole |
| Series | RGWSX2TS65GC13 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247GE |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 40A |
| Maximum Collector Emitter Voltage Vceo | 650V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.6V |
| Maximum Power Dissipation Pd | 288W |
| Maximum Gate Emitter Voltage VGEO | ±30 V |
ROHM RGWSX2TS65GC13 is an Insulated Gate Bipolar Transistor (IGBT) designed for power electronic applications requiring efficient switching and reliable operation. This device supports a maximum continuous collector current of 40 amperes and withstands collector emitter voltages up to 650 volts, packaged in a 3-pin TO-247GE format suitable for through hole mounting on circuit boards.
The transistor features a maximum power dissipation rating of 288 watts and a low collector emitter saturation voltage of 1.6 volts, which reduces conduction losses and improves overall efficiency. It supports a gate emitter voltage of ±30 volts and can safely operate across a wide ambient temperature range from -40°C to 175°C, making it suitable for industrial, automotive, and consumer electronic applications.
The RGWSX2TS65GC13 benefits from ROHM's field stop trench technology, enabling high-speed switching performance with low switching losses and soft switching characteristics, significantly enhancing energy efficiency in power control systems. Its lead plating is environmentally friendly and RoHS compliant, ensuring it meets strict environmental standards.
This device is ideal for use in inverter circuits, motor control, power supplies, and other power management applications where high performance and durability are essential. Its through hole mounting makes it compatible with a variety of circuit board designs and simplifies assembly.
Supports maximum continuous collector current of 40 amperes. Maximum collector emitter voltage rating of 650 volts. Maximum power dissipation of 288 watts supports robust performance. Low collector emitter saturation voltage of 1.6 volts minimizes power loss.
Suitable for through hole mounting with TO-247GE package. Wide operating temperature range from -40°C to 175°C for reliable use in harsh environments. Maximum gate emitter voltage of ±30 volts for stable control. Lead plating is Pb-free and RoHS compliant for environmental safety.
High speed, fast switching technology enhances efficiency. Optimized for applications in industrial, automotive, and consumer electronics. Explore additional ROHM electronic components and semiconductor devices in our Electronics & Electricals category to suit your design and manufacturing needs.
Explore more products in our IGBTs category.
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